# US 9,039,915 B2 · Etching solution compositions for metal laminate films

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- Number: US 9,039,915 B2
- Document ID: US9039915B2
- Status: Granted
- Kind: B2
- Application number: 13/201,955
- Filed: 2010-02-23
- Published: 2011-12-08
- Granted: 2015-05-26
- Earliest claimed: 2009-02-23
- Assignees: Kanto Kagaku Kabushiki Kaisha
- Applicants: Kenji Kuroiwa; Kazuaki Nagashima; Masaru Kato; Masahiro Nohara
- Inventors: Kenji Kuroiwa; Kazuaki Nagashima; Masaru Kato; Masahiro Nohara
- Web page: https://patentgrep.com/patent/US9039915B2

## CPC

- C23F 1/20: for etching aluminium or alloys thereof
- C23F 1/26: for etching refractory metals
- C23F 1/44: Compositions for etching metallic material from a metallic material substrate of different composition
- H10P 50/667: {by liquid etching only}
- C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed are etching solution compositions that comprise fluorine compounds and iron ions, which are used for bulk etching of metal laminate films wherein a layer comprising aluminum or an aluminum alloy is laminated on top and a layer comprising titanium or a titanium alloy on bottom, and an etching method using said etching solution compositions.

## Claims

### Claim 1

A method for one-time etching a metal laminate film in which a layer formed from aluminum or an aluminum alloy as an upper part and a layer formed from titanium or a titanium alloy as a lower part are laminated and which is formed on a glass substrate, the method using an etching solution composition comprising a fluorine compound and an iron ion, wherein a part of the layer formed from aluminum or an aluminum alloy is etched to expose the layer formed from titanium or a titanium alloy in the etching.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the etching solution composition has a pH of no greater than 2.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the etching solution composition comprises a fluorine compound at a concentration of 0.01 to 0.5 mol/L and an iron ion at 0.0001 to 0.05 mol/L.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the etching solution composition further comprises one or more types selected from the group consisting of nitric acid, hydrochloric acid, perchloric acid, and methanesulfonic acid.

### Claim 5 (depends on 4)

The method according to claim 4, wherein the etching solution composition comprises one or more types selected from the group consisting of nitric acid, hydrochloric acid, perchloric acid, and methanesulfonic acid at a total concentration of 0.01 to 1.0 mol/L.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the etching solution composition further comprises phosphorous acid and/or phosphoric acid.

### Claim 7 (depends on 6)

The method according to claim 6, wherein the etching solution composition comprises phosphorous acid and/or phosphoric acid at a total concentration of 0.001 to 0.1 mol/L.

### Claim 8

A method for one-time etching a metal laminate film in which a layer formed from aluminum or an aluminum alloy as an upper part and a layer formed from titanium or a titanium alloy as a lower part are laminated and which is formed on a glass substrate, the method using an etching solution composition comprising hydrofluoric acid at a concentration of 0.01 to 0.5 mol/L, trivalent iron ion at 0.0001 to 0.05 mol/L, nitric acid at 0.01 to 1.0 mol/L, and phosphorous acid at 0.001 to 0.1 mol/L.