# US 9,039,913 B2 · Semiconductor device manufacturing method

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,039,913 B2
- Document ID: US9039913B2
- Status: Granted
- Kind: B2
- Application number: 14/447,881
- Filed: 2014-07-31
- Published: 2015-02-05
- Granted: 2015-05-26
- Earliest claimed: 2013-07-31
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Kazuto Ogawa; Kazuki Narishige; Takanori Sato
- Web page: https://patentgrep.com/patent/US9039913B2

## CPC

- H10P 50/283: {by chemical means}
- H01J 37/32091: {the radio frequency energy being capacitively coupled to the plasma}
- H10P 50/73: {using masks for insulating materials}
- H10P 76/405: {characterised by their composition, e.g. multilayer masks}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

## Claims

### Claim 1

A semiconductor device manufacturing method comprising:
preparing, in a processing chamber of a plasma processing apparatus, a target object including a multilayer film and a mask formed on the multilayer film, the multilayer film being formed by alternately stacking a silicon oxide film and a silicon nitride film;
etching the multilayer film by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

### Claim 2 (depends on 1)

The semiconductor device manufacturing method of claim 1, wherein the plasma processing apparatus is a capacitively coupled plasma processing apparatus; and in said etching the multilayer film, an RF power for plasma generation is applied to an upper electrode or a lower electrode of the plasma processing apparatus, and an RF bias power is applied to the lower electrode of the plasma processing apparatus.

### Claim 3 (depends on 1)

The semiconductor device manufacturing method of claim 1, wherein the fluorohydrocarbon gas is CH2F2 gas, CH3F gas or CHF3 gas.

### Claim 4 (depends on 1)

The semiconductor device manufacturing method of claim 1, wherein the hydrocarbon gas is CH4 gas.

### Claim 5 (depends on 1)

The semiconductor device manufacturing method of claim 1, wherein the mask is made of amorphous carbon.

### Claim 6 (depends on 1)

The semiconductor device manufacturing method of claim 1, wherein a temperature of the target object is changed during said etching the multilayer film.

### Claim 7 (depends on 6)

The semiconductor device manufacturing method of claim 6, wherein in said etching the multilayer film, a temperature of the target object in a first period is set to be higher than a temperature of the target object in a second period following the first period.

### Claim 8 (depends on 6)

The semiconductor device manufacturing method of claim 6, wherein in said etching the multilayer film, a temperature of the target object in a first period is set to be lower than a temperature of the target object in a second period following the first period.