# US 9,039,911 B2 · Plasma-enhanced etching in an augmented plasma processing system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,039,911 B2 - Document ID: US9039911B2 - Status: Granted - Kind: B2 - Application number: 13/626,793 - Filed: 2012-09-25 - Published: 2014-02-27 - Granted: 2015-05-26 - Earliest claimed: 2012-08-27 - Assignees: Lam Research Corporation - Applicants: Lam Research Corporation - Inventors: Eric A. Hudson; Andrew D. Bailey, III; Rajinder Dhindsa - Web page: https://patentgrep.com/patent/US9039911B2 ## CPC - H10P 50/242: {of Group IV materials} - H01J 37/32009: {Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources (plasma generation in general H05H1/24)} - H01J 37/32091: {the radio frequency energy being capacitively coupled to the plasma} - H01J 37/321: {the radio frequency energy being inductively coupled to the plasma} - H01J 37/32192: {Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence)} - H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream} - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H01J 37/32458: {Vessel} - H01J 37/32715: {Workpiece holder} - H10P 50/267: {using plasmas} - H10P 50/283: {by chemical means} - H10P 50/287: {by chemical means} - H10P 72/0421: {for drying etching} - H01J 2237/334: Etching - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma. ## Claims ### Claim 1 A method for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure, comprising: providing a primary feed gas into said primary plasma generating region; wherein the primary feed gas is provided to said primary plasma generating region from outside the plasma processing chamber; providing a secondary feed gas into said secondary plasma generating region, said secondary feed gas being different from said primary feed gas; generating a primary plasma from said primary feed gas; generating a secondary plasma from said secondary feed gas; etching said substrate using at least said primary plasma and neutral species from said secondary plasma, said neutral species migrating from said secondary plasma generating region to said primary plasma generating region across said semi-barrier structure, wherein said semi-barrier structure provides a barrier to the transfer of charged particles and plasma from the primary plasma generating region to the secondary plasma generating region. ### Claim 2 (depends on 1) The method of claim 1 wherein said etching is a dielectric etch. ### Claim 3 (depends on 1) The method of claim 1 wherein a pressure in said secondary plasma generating region is greater than a pressure in said primary plasma generating region. ### Claim 4 (depends on 1) The method of claim 1 wherein said secondary feed gas is a non-polymer forming gas. ### Claim 5 (depends on 1) The method of claim 1 further comprising setting input parameters for said secondary plasma generating region to emphasize dissociation of said secondary feed gas, wherein said secondary feed gas includes H2. ### Claim 6 (depends on 5) The method of claim 5 wherein said primary feed gas includes at least one of CF4, CxFy, and CHxFy where x and y are integer values. ### Claim 7 (depends on 1) The method of claim 1 further comprising setting input parameters for said secondary plasma generating region to emphasize dissociation of said secondary feed gas, wherein said secondary feed gas includes at least one of O2, N2 and NF3. ### Claim 8 (depends on 7) The method of claim 7 wherein said primary feed gas includes at least one of argon and a fluorocarbon-containing gas. ### Claim 9 (depends on 1) The method of claim 1 further comprising setting input parameters for said secondary plasma generating region to emphasize dissociation of said secondary feed gas, wherein said secondary feed gas includes at least one of argon and N2. ### Claim 10 (depends on 9) The method of claim 9 wherein said primary feed gas includes at least one of argon, O2 and a fluorocarbon-containing gas. ### Claim 11 (depends on 9) The method of claim 9 wherein said primary feed gas includes CO2. ### Claim 12 (depends on 1) The method of claim 1 further comprising setting input parameters for said secondary plasma generating region to emphasize dissociation of said secondary feed gas, wherein said secondary feed gas includes N2. ### Claim 13 (depends on 1) The method of claim 1 further comprising setting input parameters for said secondary plasma generating region to emphasize dissociation of said secondary feed gas, wherein said secondary feed gas includes H2 and wherein said primary feed gas includes N2. ### Claim 14 (depends on 1) The method of claim 1, wherein said neutral species migrating from said secondary plasma generating region to said primary plasma generating region across said semi-barrier structure are uniformly distributed over said substrate. ### Claim 15 (depends on 1) The method of claim 1, wherein an array of holes in the semi-barrier structure is uniformly distributed over said substrate. ### Claim 16 A method for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure, comprising: providing a primary feed gas into said primary plasma generating region; providing a secondary feed gas into said secondary plasma generating region, said secondary feed gas being different from said primary feed gas; generating a primary plasma from said primary feed gas; generating a secondary plasma from said secondary feed gas; etching said substrate using at least said primary plasma and neutral species from said secondary plasma, said neutral species migrating from said secondary plasma generating region to said primary plasma generating region across said barrier structure; thereafter turning off a power source to said primary plasma generating region, thereby inhibiting formation of said primary plasma; providing another secondary feed gas into said secondary plasma generating region to generate another secondary plasma; thereafter performing downstream plasma processing on said substrate using species from said another secondary plasma after said species from said another secondary plasma migrates across said barrier structure. ### Claim 17 (depends on 16) The method of claim 16 wherein said etching represents a dielectric etch. ### Claim 18 (depends on 17) The method of claim 17 wherein said another secondary feed gas includes H2. ### Claim 19 (depends on 16) The method of claim 16 further comprising setting input parameters for said secondary plasma generating region to emphasize dissociation of at least one of said secondary feed gas and said another secondary feed gas. ### Claim 20 (depends on 16) The method of claim 16 wherein said downstream plasma processing represents defluorination. ### Claim 21 A method for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure, comprising: providing a primary feed gas into said primary plasma generating region, wherein the primary feed gas is provided to said primary plasma generating region from outside the plasma processing chamber; providing a secondary feed gas into said secondary plasma generating region, said secondary feed gas being different from said primary feed gas; generating a primary plasma from said primary feed gas, said primary plasma employing a capacitively coupling mechanism; generating a secondary plasma from said secondary feed gas; and etching said substrate using at least said primary plasma and neutral species from said secondary plasma, said neutral species migrating from said secondary plasma generating region to said primary plasma generating region across said semi-barrier structure, said semi-barrier structure providing a barrier to the transfer of charged particles and plasma from the primary plasma generating region to the secondary plasma generating region. ### Claim 22 (depends on 21) The method of claim 21 wherein said generating said secondary plasma employs a capacitively coupling mechanism. ### Claim 23 (depends on 21) The method of claim 21 wherein said semi-barrier structure includes a set of holes, each hole in said set of holes having a high aspect ratio configured to inhibit the formation of a plasma in said each hole.