# US 9,039,910 B2 · Methods and apparatus for controlling photoresist line width roughness > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,039,910 B2 - Document ID: US9039910B2 - Status: Granted - Kind: B2 - Application number: 13/276,496 - Filed: 2011-10-19 - Published: 2012-05-03 - Granted: 2015-05-26 - Earliest claimed: 2010-10-27 - Assignees: Applied Materials, Inc. - Applicants: Banqiu Wu; Ajay Kumar - Inventors: Banqiu Wu; Ajay Kumar - Web page: https://patentgrep.com/patent/US9039910B2 ## CPC - H10P 76/204: {of organic photoresist masks} - H01J 37/32192: {Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence)} - H01J 37/3266: {Magnetic control means} - H01J 37/32678: {Electron cyclotron resonance} - H10P 50/287: {by chemical means} - H01J 2237/3343: Problems associated with etching - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a microwave power generator coupled to the to the chamber body through a waveguild, and one or more coils or magnets disposed around an outer circumference of the chamber body adjacent to the waveguide, and a gas source coupled to the waveguide through a gas delivery passageway. ## Claims ### Claim 1 A method for controlling line width roughness of a photoresist layer disposed on a substrate comprising: after a photoresist layer has been patterned on a substrate to form openings, generating an electric field from a microwave power generator in a waveguide formed in a processing chamber having the substrate disposed therein, the waveguide having a first end closed by a dielectric window formed as a lid of the processing chamber and a second end facing the substrate, the window exposed to the substrate through the waveguide; supplying a gas mixture into the first end of waveguide, the gas mixture flowing through the waveguide toward the substrate to the patterned photoresist layer in an uninterrupted flow path; interacting the electric field perpendicularly with a magnetic field generated in the waveguide, wherein the electric field has an uninterrupted path between the first end and the second end of the waveguide; forming a plasma in the gas mixture toward the substrate; and trimming an edge profile of the patterned photoresist layer with the plasma formed in the processing chamber. ### Claim 2 (depends on 1) The method of claim 1, wherein generating the electric field further comprises: applying a microwave power through the dielectric window to the processing chamber to generate the electric field. ### Claim 3 (depends on 1) The method of claim 1, wherein generating the magnetic field further comprising: applying a DC or AC power to one or more coils or magnets disposed around the outer circumference of the processing chamber to generate the magnetic field. ### Claim 4 (depends on 3) The method of claim 3, wherein the coils or magnets are permanent magnets or electromagnets. ### Claim 5 (depends on 1) The method of claim 1, wherein supplying the gas mixture further comprises: supplying an oxygen containing gas into the processing chamber. ### Claim 6 (depends on 5) The method of claim 5, wherein the oxygen containing gas is O2. ### Claim 7 (depends on 1) The method of claim 1, wherein trimming the edge profile of the patterned photoresist layer further comprising: adjusting the interaction between the magnetic field and the electric field generated in the processing chamber. ### Claim 8 (depends on 7) The method of claim 7, wherein adjusting the interaction further comprises: controlling the edge profile of the photoresist layer having a line width roughness less than about 3.0 nm. ### Claim 9 (depends on 1) The method of claim 1, further comprising: supplying a RF bias power to the substrate through a substrate support assembly disposed in the processing chamber. ### Claim 10 (depends on 1) The method of claim 1, further comprises: etching the substrate using the trimmed patterned photoresist layer as an etching mask. ### Claim 11 A method for controlling line width roughness of a photoresist layer disposed on a substrate comprising: after a photoresist layer has been patterned on a substrate to form openings, supplying a gas mixture through a waveguide in an uninterrupted flow path into a processing chamber having the substrate disposed therein; applying a microwave power from a microwave power generator through a dielectric window to the processing chamber to generate an electric field in the waveguide in the processing chamber, the waveguide having a first end closed by the dielectric window formed as a lid of the processing chamber and a second end facing the substrate, the window exposed to the substrate through the waveguide; applying DC or AC power to one or more coils or magnets disposed around an outer circumference of the processing chamber to generate the magnetic field in the waveguide; forming a plasma in the gas mixture by the interaction of the magnetic field and the electric field with uninterrupted path in the waveguide, wherein the gas mixture is supplied into the first end of waveguide, the gas mixture flowing through the waveguide toward the substrate to the patterned photoresist layer; and trimming an edge profile of the patterned photoresist layer using the plasma formed in the processing chamber. ### Claim 12 (depends on 11) The method of claim 11, wherein trimming the edge profile of the patterned photoresist layer further comprises: controlling the edge profile of the photoresist layer having a line width roughness less than about 3.0 nm. ### Claim 13 (depends on 11) The method of claim 11, wherein supplying the gas mixture further comprises: supplying an oxygen containing gas into the processing chamber.