# US 9,039,886 B2 · Method of transferring graphene

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- Number: US 9,039,886 B2
- Document ID: US9039886B2
- Status: Granted
- Kind: B2
- Application number: 13/659,355
- Filed: 2012-10-24
- Published: 2013-08-29
- Granted: 2015-05-26
- Earliest claimed: 2012-02-24
- Assignees: Cheil Industries Inc.
- Applicants: Kuanping Gong; Lijie Ci; Sung-Hee Ahn; Jin-Seong Park; Byeong-Yeol Kim
- Inventors: Kuanping Gong; Lijie Ci; Sung-Hee Ahn; Jin-Seong Park; Byeong-Yeol Kim
- Web page: https://patentgrep.com/patent/US9039886B2

## CPC

- B32B 38/10: Removing layers, or parts of layers, mechanically or chemically
- C01B 32/186: by chemical vapour deposition [CVD]
- C01B 32/194: After-treatment
- C25F 5/00: Electrolytic stripping of metallic layers or coatings
- B32B 37/06: characterised by the heating method
- B32B 38/162: {Cleaning}
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C25F: PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR

## Abstract

A method of transferring graphene includes depositing graphene on a side of at least one metal substrate to provide a metal substrate-graphene layer, stacking a target substrate on a side of the metal substrate-graphene layer to provide a stacked structure in which a side of the target substrate faces the graphene layer, and exposing the stacked structure to an electrolysis bath to remove the metal substrate and transfer the graphene onto the side of the target substrate.

## Claims

### Claim 1

A method of transferring graphene, the method comprising:
depositing graphene on a side of a metal substrate to provide a metal substrate-graphene layer;
stacking a target substrate on the metal substrate-graphene layer to provide a stacked structure in which a side of the target substrate faces the graphene layer; and
passing the stacked structure through an electrolysis bath to etch the metal substrate and transfer the graphene onto the side of the target substrate.

### Claim 2 (depends on 1)

The method as claimed in claim 1, wherein:
the electrolysis bath includes electrodes including a positive (+) electrode and a negative (−) electrode, and a solution, and
when the stacked structure is passed through the electrolysis bath, a metal included in the metal substrate is oxidized to form a metal ion in the (+) electrode, and the formed metal ion is reduced and precipitated to a metal in the (−) electrode.

### Claim 3 (depends on 2)

The method as claimed in claim 2, wherein a voltage of about 0.001V to about 100V is applied to the electrodes.

### Claim 4 (depends on 1)

The method as claimed in claim 1, wherein the stacked structure is provided by stacking the target substrate on the metal substrate-graphene layer and passing the stacked target substrate and metal substrate-graphene layer through a roller device.

### Claim 5 (depends on 4)

The method as claimed in claim 4, wherein the stacking of the target substrate on the metal substrate-graphene layer includes at least one of:
forming a polymer binder film between the metal substrate-graphene layer and the target substrate, and
performing a heat treatment on the target substrate on the metal substrate-graphene layer.

### Claim 6 (depends on 5)

The method as claimed in claim 5, wherein:
the stacking of the target substrate on the metal substrate-graphene later includes forming the polymer binder film, and
the polymer binder film includes at least one selected from polystyrene, polyethylene glycol, poly(methyl methacrylate), polyvinylpyrrolidone, Nafion®, poly(acrylic acid) sodium, poly(diallyldimethyl ammonium chloride), and polyethylenimine.

### Claim 7 (depends on 5)

The method as claimed in claim 5, wherein:
the stacking of the target substrate on the metal substrate-graphene layer includes performing the heat treatment, and
the heat treatment is performed at a temperature of about 60° C. to about 200° C.

### Claim 8 (depends on 1)

The method as claimed in claim 1, wherein:
the depositing of graphene on the side of the metal substrate to provide the metal substrate-graphene layer includes depositing the graphene on at least one side of each of at least two metal substrates to provide at least two metal substrate-graphene layers;
the stacking of the target substrate on the metal substrate-graphene layer to provide the stacked structure includes stacking one target substrate between each of the at least two metal substrate-graphene layers to provide the stacked structure in which both sides of the target substrate face a graphene layer of one of the metal substrate-graphene layers; and
the passing of the stacked structure through the electrolysis bath transfers the graphene onto both sides of the target substrate.

### Claim 9 (depends on 1)

The method as claimed in claim 1, wherein:
the depositing of graphene on the side of the metal substrate to provide the metal substrate-graphene layer includes depositing the graphene on two sides of the metal substrate to provide a metal substrate-graphene layer having graphene on two sides;
the stacking of the target substrate on the metal substrate-graphene layer to provide the stacked structure includes stacking one target substrate on each side of the metal substrate-graphene layer to provide the stacked structure in which a facing side of each target substrate faces a graphene layer of one of the two sides of the metal substrate-graphene layer having graphene on two sides; and
the passing of the stacked structure through the electrolysis bath transfers the graphene onto the facing side of the each of the target substrates.

### Claim 10 (depends on 1)

The method as claimed in claim 1, further comprising, after transferring the graphene on at least one side of the target substrate:
stacking another target substrate on the graphene layer transferred onto the side of the target substrate.

### Claim 11 (depends on 1)

The method as claimed in claim 1, wherein the stacked structure is directed to pass through the electrolysis bath by a roller device.

### Claim 12 (depends on 1)

The method as claimed in claim 1, wherein the metal substrate includes at least one metal or alloy selected from Cu, Ni, Co, Fe, Pt, Au, Ru, Al, Cr, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr, brass, bronze, white brass, stainless steel, and Ge.

### Claim 13 (depends on 1)

The method as claimed in claim 1, wherein the target substrate includes at least one selected from a thermal release tape, a polyethylene terephthalate substrate, a polyimide substrate, a polyethylene naphthalate substrate, a polycarbonate substrate, a glass substrate, a silicon wafer, a porous inorganic or organic membrane, a metal-organic frame, an ion-exchange film, and a membrane electrode.

### Claim 14 (depends on 1)

The method as claimed in claim 1, further comprising:
cleaning the transferred graphene on the target substrate.

### Claim 15 (depends on 1)

The method as claimed in claim 1, wherein the graphene transferred to the target substrate has an electrical resistance of about 1 to about 10000 Ω/sq.