# US 9,039,872 B2 · Method for producing a transparent and conductive metal oxide layer by highly ionized pulsed magnetron sputtering > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,039,872 B2 - Document ID: US9039872B2 - Status: Granted - Kind: B2 - Application number: 12/997,712 - Filed: 2009-06-09 - Published: 2011-07-14 - Granted: 2015-05-26 - Earliest claimed: 2008-06-13 - Assignees: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V. - Applicants: Felix Horstmann; Volker Sittinger; Bernd Szyszka - Inventors: Felix Horstmann; Volker Sittinger; Bernd Szyszka - Web page: https://patentgrep.com/patent/US9039872B2 ## CPC - C23C 14/5806: {Thermal treatment} - C23C 14/086: {of zinc, germanium, cadmium, indium, tin, thallium or bismuth} - C23C 14/3485: {using pulsed power to the target} - C23C 14/3492: {Variation of parameters during sputtering} - C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} - H01J 37/3467: {Pulsed operation, e.g. HIPIMS} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A method for producing a transparent and conductive metal oxide layer on a substrate, includes atomizing at least one component of the metal oxide layer by highly ionized, high power pulsed magnetron sputtering to condense on the substrate. The pulses of the magnetron have a peak power density of more than 1.5 kW/cm2, the pulses of the magnetron have a duration of ≦200 μs, and the average increase in current density during ignition of the plasma within an interval, which is ≦0.025 ms, is at least 106 A/(ms cm2). ## Claims ### Claim 1 A method for producing a transparent and conductive metal oxide layer on a substrate, the method comprising the following steps: atomizing at least one component of the metal oxide layer by highly ionized pulsed high-power magnetron sputtering and condensing the at least one component on the substrate; providing the pulses of the magnetron with a peak power density of greater than 1.5 kW/cm2; providing the pulses of the magnetron with a duration of ≦200 μs; and providing an average increase in current density during ignition of the plasma of at least 106 A/(ms cm2) within a time interval of ≦0.025 ms. ### Claim 2 (depends on 1) The method according to claim 1, which further comprises providing the pulses of the magnetron with a peak power density of at least 3.0 kW/cm2. ### Claim 3 (depends on 1) The method according to claim 1, which further comprises providing the pulses of the magnetron with a duration of ≦100 μs. ### Claim 4 (depends on 1) The method according to claim 1, which further comprises providing the pulses of the magnetron with a duration of ≦50 μs. ### Claim 5 (depends on 1) The method according to claim 1, which further comprises providing the pulses of the magnetron with a duration of ≦40 μs. ### Claim 6 (depends on 1) The method according to claim 1, which further comprises providing the pulses of the magnetron with a duration of ≦35 μs. ### Claim 7 (depends on 1) The method according to claim 1, which further comprises providing the pulses of the magnetron with a frequency of at least 100 Hz. ### Claim 8 (depends on 1) The method according to claim 1, which further comprises providing the pulses of the magnetron with a frequency between 350 Hz and 2 kHz. ### Claim 9 (depends on 1) The method according to claim 1, which further comprises atomizing a ceramic target for creating the metal oxide layer. ### Claim 10 (depends on 1) The method according to claim 1, which further comprises atomizing a metallic target in a reactive gas process with an addition of oxygen for creating the metal oxide layer. ### Claim 11 (depends on 1) The method according to claim 1, which further comprises coating the substrate with the metal oxide at a temperature of less than 100° C. ### Claim 12 (depends on 1) The method according to claim 1, which further comprises creating the metal oxide layer with a finely crystalline structure having lateral and vertical grain sizes of less than 35 nm. ### Claim 13 (depends on 1) The method according to claim 1, which further comprises tempering the substrate with the metal oxide layer in a further method step. ### Claim 14 (depends on 13) The method according to claim 13, which further comprises substantially retaining a crystallinity and a crystallite size of the metal oxide layer after the tempering step. ### Claim 15 (depends on 13) The method according to claim 13, which further comprises limiting a change in crystallite size after the tempering step, both laterally and horizontally, to less than 30%. ### Claim 16 (depends on 13) The method according to claim 13, which further comprises limiting a change in crystallite size after the tempering step, both laterally and horizontally, to less than 20%. ### Claim 17 (depends on 13) The method according to claim 13, which further comprises limiting a change in crystallite size after the tempering step, both laterally and horizontally, to less than 10%. ### Claim 18 (depends on 1) The method according to claim 1, which further comprises operating the magnetron without arc discharge handling.