# US 9,039,218 B2 · White LED lamp, backlight, light emitting device, display device and illumination device

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- Number: US 9,039,218 B2
- Document ID: US9039218B2
- Status: Granted
- Kind: B2
- Application number: 13/619,500
- Filed: 2012-09-14
- Published: 2013-01-10
- Granted: 2015-05-26
- Earliest claimed: 2008-02-25
- Assignees: Kabushiki Kaisha Toshiba; Toshiba Materials Co., Ltd.
- Applicants: Tsutomu Ishii; Hajime Takeuchi; Yasumasa Ooya; Katsutoshi Nakagawa; Yumi Ito; Masaki Toyoshima; Yasuhiro Shirakawa; Ryo Sakai
- Inventors: Tsutomu Ishii; Hajime Takeuchi; Yasumasa Ooya; Katsutoshi Nakagawa; Yumi Ito; Masaki Toyoshima; Yasuhiro Shirakawa; Ryo Sakai
- Web page: https://patentgrep.com/patent/US9039218B2

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- C09K 11/584: {with zinc or cadmium}
- C09K 11/642: {with zinc or cadmium}
- C09K 11/7734: {Aluminates}
- C09K 11/77342: {Silicates}
- C09K 11/77348: {Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides}
- C09K 11/7739: {with halogens}
- C09K 11/7741: {Sulfates}
- C09K 11/7789: {Oxysulfides}
- H05B 33/14: characterised by the chemical or physical composition or the arrangement of the electroluminescent material {, or by the simultaneous addition of the electroluminescent material in or onto the light source}
- H05B 33/20: characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
- H10H 20/835: {Reflective materials}
- H10H 20/8513: {having two or more wavelength conversion materials}
- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- H10H 20/8515: {not being in contact with the bodies}
- H10H 20/853: characterised by their shape
- H10H 20/856: Reflecting means
- H10H 20/8582: {characterised by their shape}
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/5363: {the connected ends being wedge-shaped}
- Y02B 20/00: Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y02B: CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS

## Abstract

A white LED lamp including: a conductive portion; a light emitting diode chip mounted on the conductive portion, for emitting a primary light having a peak wavelength of 360 nm to 420 nm; a transparent resin layer including a first hardened transparent resin, for sealing the light emitting diode chip; and a phosphor layer covering the transparent resin layer, the phosphor layer being formed by dispersing a phosphor powder into a second hardened transparent resin, and the phosphor powder receiving the primary light and radiating a secondary light having a wavelength longer than that of the primary light. An energy of the primary light contained in the radiated secondary light is 0.4 mW/Im or less.

## Claims

### Claim 1

A white LED lamp comprising:
a conductive portion;
a light emitting diode chip, which is mounted on the conductive portion, for emitting a primary light having a peak wavelength of 360 nm to 420 nm;
a transparent resin layer, which is composed of a silicone resin as a first hardened transparent resin, for sealing the light emitting diode chip; and
a phosphor layer for covering the transparent resin layer, the phosphor layer being formed by dispersing a phosphor powder into a second hardened transparent resin, and the phosphor powder receiving the primary light and radiating a secondary light having a wavelength longer than that of the primary light,
wherein the phosphor powder has an average grain size of 10 to 100 μm, the phosphor layer has a thickness of 0.1 to 1.5 mm, and an energy of the primary light contained in the radiated secondary light is 0.4 mW/lm or less,
said phosphor powder contains a blue phosphor powder for emitting blue light, a yellow phosphor powder for emitting yellow light, and a red phosphor powder for emitting red light, and
said yellow phosphor powder contains a yellow phosphor powder having a composition expressed by an equation (4):
(Sr2-x-y-z-uBaxMgyEuzMnu)SiO4 (4)
wherein x, y, z and u respectively satisfy the relations 0.1<x<0.4, 0.005<y<0.21, 0.05<z<0.3, 0.001<u<0.04.

### Claim 2

A white LED lamp comprising:
a conductive portion;
a light emitting diode chip, which is mounted on the conductive portion, for emitting a primary light having a peak wavelength of 360 nm to 420 nm;
a transparent resin layer, which is composed of a silicone resin as a first hardened transparent resin, for sealing the light emitting diode chip; and
a phosphor layer for covering the transparent resin layer, the phosphor layer being formed by dispersing a phosphor powder into a second hardened transparent resin, and the phosphor powder receiving the primary light and radiating a secondary light having a wavelength longer than that of the primary light,
wherein the phosphor powder has an average grain size of 10 to 100 μm, the phosphor layer has a thickness of 0.1 to 1.5 mm, and an energy of the primary light contained in the radiated secondary light is 0.4 mW/lm or less,
said phosphor powder contains a blue phosphor powder for emitting blue light, a yellow phosphor powder for emitting yellow light, and a red phosphor powder for emitting red light, and
said blue phosphor powder contains the blue phosphor powder having the composition expressed by an equation (1):
(Sr1-x-y-zBaxCayEuz)5(PO4)3Cl (1)
wherein x, y and z respectively satisfy the relations 0≦x≦0.5, 0≦y<0.1, 0.005<z<0.1;
said yellow phosphor powder contains at least one of the yellow phosphor powder having the composition expressed by an equation (3):
ZnS: AucAld (3)
wherein c and d respectively satisfy the relations 0.0001<c, d<0.002 and the yellow phosphor powder having the composition expressed by an equation (4):
(Sr2-x-y-z-uBaxMgyEuzMnu)SiO4 (4)
wherein x, y, z and u respectively satisfy the relations 0.1<x<0.4, 0.005<y<0.21, 0.05<z<0.3, 0.001<u<0.04; and
said red phosphor powder contains at least one of the red phosphor powder having the composition expressed by an equation (5):
(La1-x-yEuxMy)2O2S (5)
wherein M is at least one element selected from a group consisting of Sb, Sm, Ga and Sn, while x and y respectively satisfy the relations 0.01<x<0.15, 0≦y<0.03
and the red phosphor powder having the composition expressed by equation (6):
(SrxCa1-x)SiAlN3:Eu (6)
wherein x satisfies a relation 0≦x<0.4.

### Claim 3 (depends on 1, 2)

The white LED lamp according to claim 1 or 2, wherein said phosphor powder contains a blue phosphor powder for emitting a blue light having a peak wavelength of 430 nm to 460 nm, and a ratio of a peak strength of the primary light with respect to that of the blue light in an emission spectrum of the radiated secondary light is 0.5 or less.

### Claim 4 (depends on 1, 2)

The white LED lamp according to claim 1 or 2, wherein said white LED lamp has a luminous efficiency of 20 lm/W or more.

### Claim 5 (depends on 1)

The white LED lamp according to claim 1, wherein said yellow phosphor powder contains a yellow phosphor powder having a composition expressed by an equation (3):
ZnS: AucAld (3)
wherein c and d respectively satisfy the relations 0.0001<c, d<0.002.

### Claim 6 (depends on 1, 2)

The white LED lamp according to claim 1 or 2, wherein said conductive portion is provided on an insulating portion thereby to constitute a substrate, and the insulating portion is either one of an alumina plate, an aluminum nitride plate and a glass epoxy plate provided with a heat radiation via.

### Claim 7 (depends on 6)

The white LED lamp according to claim 6, wherein a thermal resistance Rth per one light emitting diode chip between a junction portion of the light emitting diode chip and a rear surface of the substrate is 40° C./W or less.

### Claim 8 (depends on 1, 2)

The white LED lamp according to claim 1 or 2, wherein said conductive portion is a light reflecting electrode.

### Claim 9 (depends on 8)

The white LED lamp according to claim 8, wherein said light reflecting electrode is an electrode composed of at least one metal selected from a group consisting of Ag, Pt, Ru, Pd and Al.

### Claim 10 (depends on 1, 2)

The white LED lamp according to claim 1 or 2, wherein at a surface of said conductive portion is provided with a light reflecting layer.

### Claim 11 (depends on 10)

The white LED lamp according to claim 10, wherein said light reflecting layer is a cover layer containing fine powder composed of inorganic substance selected from a group consisting of titanium oxide, barium sulphide, alumina and silica.

### Claim 12 (depends on 10)

The white LED lamp according to claim 10, wherein said light reflecting layer is a cover layer composed of at least one metal selected from a group consisting of Al, Ag, Pt, Ru and Pd.

### Claim 13 (depends on 1, 2)

The white LED lamp according to claim 1 or 2, wherein at surface of said phosphor layer is further formed with a UV light absorbing layer which is formed by dispersing UV light absorbing powder into a third hardened transparent resin.

### Claim 14 (depends on 13)

The white LED lamp according to claim 13, wherein said UV light absorbing powder is fine powder composed of inorganic substance selected from a group consisting of titanium oxide, zinc oxide and cerium oxide.

### Claim 15 (depends on 1, 2)

The white LED lamp according to claim 1 or 2, wherein said light emitting diode chip is InGaN type, GaN type or AlGaN type light emitting diode chip.

### Claim 16 (depends on 1, 2)

A backlight comprising the white LED lamp according to claim 1 or 2.

### Claim 17 (depends on 1, 2)

A lighting device comprising the white LED lamp according to claim 1 or 2.