# US 9,038,566 B2 · Capacitive coupling plasma processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,038,566 B2 - Document ID: US9038566B2 - Status: Granted - Kind: B2 - Application number: 13/278,228 - Filed: 2011-10-21 - Published: 2012-02-16 - Granted: 2015-05-26 - Earliest claimed: 2005-03-31 - Assignees: Tokyo Electron Limited - Applicants: Shinji Himori; Tatsuo Matsudo - Inventors: Shinji Himori; Tatsuo Matsudo - Web page: https://patentgrep.com/patent/US9038566B2 ## CPC - H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)} - H01J 37/32091: {the radio frequency energy being capacitively coupled to the plasma} - H01J 37/32532: {Electrodes} - H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode. ## Claims ### Claim 1 A capacitive coupling plasma processing apparatus comprising: a process chamber configured to have a vacuum atmosphere; a process gas supply section configured to supply a process gas into the chamber; a lower electrode disposed in the chamber and configured to support a target substrate thereon; an upper electrode disposed opposite the lower electrode in the chamber, and including a plurality of conductive segments separated from each other and facing the lower electrode; a radio frequency (RF) power supply connected to the lower electrode to apply an RF power to the lower electrode to form an RF electric field within a plasma generation region between the lower and upper electrodes, so as to turn the process gas into plasma by the RF electric field; and a direct current (DC) power supply configured to apply a DC voltage to at least one of the segments of the upper electrode, wherein the segments include an inner segment and an outer segment disposed around and separated from the inner segment, the DC power supply being configured to apply the DC voltage to a least one of the inner and outer segments, and the segments further include a middle segment disposed between and separated from the inner segment and the outer segment, the middle segment being configured to be selectively supplied with a DC voltage, wherein the inner, middle, and outer segments are concentrically disposed, wherein the upper electrode further includes a grounded conductive common base, and the inner, middle, and outer segments are supported side by side by the common base through a planate insulating film such that the inner, middle, and outer segments face the lower electrode, and wherein the common base has a gas diffusion space formed therein to receive the process gas, and a plurality of gas delivery holes are formed in the common base, the insulating film, and the segments to derive the process gas from the gas diffusion space to the plasma generation region. ### Claim 2 (depends on 1) The apparatus according to claim 1, wherein lower faces of the inner, middle, and outer segments are present on a same plane. ### Claim 3 (depends on 1) The apparatus according to claim 1, wherein the DC power supply is configured to apply the DC voltage to cause the inner segment to have an electric potential higher than that of the outer segment. ### Claim 4 (depends on 3) The apparatus according to claim 3, wherein the process chamber is grounded and the electric potential of the inner segment is a positive electric potential. ### Claim 5 (depends on 1) The apparatus according to claim 1, wherein the RF power applied from the RF power supply to the lower electrode has a frequency of 27 MHz to 160 MHz. ### Claim 6 (depends on 5) The apparatus according to claim 5, wherein the upper electrode is not connected to any RF power supply. ### Claim 7 (depends on 1) The apparatus according to claim 1, wherein the DC power supply is a variable DC power supply. ### Claim 8 (depends on 7) The apparatus according to claim 7, wherein the variable DC power supply is a bipolar power supply. ### Claim 9 (depends on 1) The apparatus according to claim 1, wherein the DC power supply is connected to at least one of the inner and outer segments through an ON/OFF switch. ### Claim 10 (depends on 1) The apparatus according to claim 1, wherein the DC power supply is connected to at least one of the inner and outer segments through a low-pass filter. ### Claim 11 (depends on 1) The apparatus according to claim 1, wherein the DC power supply has positive and negative terminals, one of which is connected to one of the inner, middle, and outer segments, and the other terminal is connected to and switchable between the other two of the inner, middle, and outer segments. ### Claim 12 (depends on 11) The apparatus according to claim 11, wherein the negative terminal of the DC power supply is connected to the outer segment, and the positive terminal of the DC power supply is connected to and switchable between the inner and middle segments. ### Claim 13 (depends on 12) The apparatus according to claim 12, wherein the negative terminal of the DC power supply is connected to the outer segment through an ON/OFF switch, and the positive terminal of the DC power supply is connected to the inner and middle segments respectively through ON/OFF switches. ### Claim 14 (depends on 11) The apparatus according to claim 11, wherein the DC power supply is connected to each of the inner, middle, and outer segments through a low-pass filter. ### Claim 15 (depends on 1) The apparatus according to claim 1, wherein the process gas supply section is configured to supply, as the process gas, an etching gas for etching the target substrate. ### Claim 16 (depends on 15) The apparatus according to claim 15, wherein the apparatus further comprises a control section configured to control an operation of the apparatus and including a non-transitory storage medium storing a control program, which, when executed, causes the control section to control the apparatus to conduct a sequence of turning the etching gas into plasma inside the process chamber to etch the target substrate by use of the plasma, while setting the inner segment to have an electric potential higher than that of the outer segment by the DC power supply, so as to uniformize spatial electric potential distribution within the plasma generation region. ### Claim 17 (depends on 15) The apparatus according to claim 15, wherein the etching gas contains a halogen-containing gas or O2 gas.