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US 9,034,687 B2Granted
Method of manufacturing graphene nanomesh and method of manufacturing semiconductor device
AssigneeFujitsu Limited
InventorsShintaro Sato, Taisuke Iwai
Life of this patent
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Abstract
Particles having a property of absorbing carbon at a particular temperature or higher are deposited on a graphene. The particles are heated to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene under the particles. The particles are removed. Consequently, a graphene nanomesh is obtained.
Claims20
A method of manufacturing a graphene nanomesh, comprising:
- depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer;
- heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with keeping the particles at their deposited positions;
- and
- removing the particles.
1 more element
A method of manufacturing a semiconductor device, comprising:
- forming a structure in which a source electrode and a drain electrode are provided on both ends of a graphene nanomesh on a substrate;
- and
- forming a gate electrode which controls a potential of the graphene nanomesh between the source electrode and the drain electrode, wherein
- the forming the structure comprises:
- depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer which is to be the graphene nanomesh;
- heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with keeping the particles at their deposited positions;
- and
- removing the particles.
5 more elements
A method of manufacturing a photodetector, comprising
- forming a structure in which an anode electrode and a cathode electrode are provided on both ends of a graphene nanomesh and a pn junction exists on a portion of the graphene nanomesh between the anode electrode and the cathode electrode on a substrate, wherein
- the forming the structure comprises:
- depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer which is to be the graphene nanomesh;
- heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with keeping the particles at their deposited positions;
- and
- removing the particles.
3 more elements
Dependencies are inferred from the claim text.