Row hammer monitoring based on stored row hammer threshold value

An electronic device comprising:

• a memory subsystem having
• a memory device having multiple physical rows of memory cells;
• and
• detection logic coupled to the memory device, the detection logic to
• obtain an access rate threshold for the memory device from a register that stores configuration information for the memory device, the threshold identifying a number of accesses to a specific row of memory within a time window that causes risk of data corruption on a row physically adjacent to the accessed row;
• determine based on the threshold whether a number of accesses to one of the multiple physical rows of the memory device exceeds the threshold;
• and
• in response to detecting that the number of accesses exceeds the threshold, trigger the memory device to perform a refresh targeted to a victim row physically adjacent to the row for which the number of accesses exceeded the threshold;
• and
• a touchscreen display device configured to provide a user display based on data accessed from the memory device.

A method comprising:

• obtaining an access rate threshold for a memory device from a register that stores configuration information for the memory device, the threshold identifying a number of accesses to a specific row of memory within a time window that causes risk of data corruption on a row physically adjacent to the accessed row;
• determining based on the threshold whether a number of accesses to one of the multiple physical rows of the memory device exceeds the threshold;
• and
• in response to detecting that the number of accesses exceeds the threshold, generating a trigger to cause the memory device to perform a refresh targeted to a victim row physically adjacent to the row for which the number of accesses exceeded the threshold.

A memory subsystem comprising:

• a memory device having multiple physical rows of memory cells;
• and
• a memory controller device coupled to the memory device, the memory controller device
• configured to obtain a programmable access rate threshold for the memory device from a register that stores configuration information for the memory device, the threshold identifying a number of accesses to a specific row of memory within a time window that causes risk of data corruption on a row physically adjacent to the accessed row, the threshold dynamically programmable;
• configured to determine that a number of accesses to one of the multiple physical rows of the memory device exceeds the threshold;
• and
• configured to trigger the memory device to perform a refresh targeted for a victim row physically adjacent to the row for which the number of accesses exceeded the threshold, in response to determining that the number of access exceeds the threshold.