Magnetoresistance sensor and fabricating method thereof
AssigneeVoltafield Technology Corporation
InventorsFu-Tai Liou, Chien-Min Lee
Life of this patent
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Abstract
An apparatus of a magnetoresistance sensor consisting of a substrate, a conductive unit on the substrate, and a magnetoresistance structure on the conductive unit is provided. The conductive unit includes a first surface and a second surface opposite to each other, and the first surface faces the substrate. The magnetoresistance structure is formed on the second surface of the conductive unit and is electrically connected to the conductive unit. The magnetoresistance sensor has high performance and reliability. A magnetoresistance sensor fabricating method based on this apparatus is also provided.
Claims23
A magnetoresistance sensor, comprising:
- a substrate;
- a conductive unit, configured on the substrate, the conductive unit comprising a plurality of routing conductive traces and an uppermost conductive layer on top of the plurality of routing conductive traces;
- and
- a magnetoresistance structure, configured on top of the uppermost conductive layer and electrically connected to the conductive unit,
- wherein the magnetoresistance structure comprises a magnetoresistance layer and a hard mask layer on the magnetoresistance layer and a thickness of the hard mask layer is less than a thickness of the magnetoresistance layer and a resistance of the hard mask layer is higher than a resistance of the magnetoresistance layer.
A fabricating method of a magnetoresistance sensor, comprising:
- providing a substrate;
- forming a conductive unit on the substrate, the conductive unit comprising a plurality of routing conductive traces and an uppermost conductive layer on top of the plurality of routing conductive traces;
- and
- forming a magnetoresistance structure on top of the uppermost conductive layer to electrically connect to the conductive unit,
- wherein forming the magnetoresistance structure comprises:
- forming a magnetoresistance layer on the uppermost conductive layer;
- and
- forming a hard mask layer on the magnetoresistance layer,
- wherein a thickness of the hard mask layer is less than a thickness of the magnetoresistance layer and a resistance of the hard mask layer is higher than a resistance of the magnetoresistance layer.
Dependencies are inferred from the claim text.