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US 9,029,272 B1Granted
Method for treating SiOCH film with hydrogen plasma
AssigneeASM IP Holding B.V.
InventorsAkinori Nakano, Shintaro Ueda, Dai Ishikawa, Kiyohiro Matsushita
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Abstract
A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.
Claims17
A method for forming a gap-fill SiOCH film on a patterned substrate, comprising:
- (i) providing a substrate having recessed features on its surface;
- (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous;
- (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma;
- and then
- (iv) curing the plasma-exposed SiOCH film with UV light emitted from a UV lamp.
2 more elements
A method for forming a gap-fill SiOCH film on a patterned substrate, comprising:
- (i) providing a substrate having recessed features on its surface;
- (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous;
- (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma;
- and
- (iv) curing the plasma-exposed SiOCH film with UV light,
- said method further comprising, after completion of step (ii) but prior to step (iii), exposing the SiOCH film to aminosilane gas without a plasma.
3 more elements
Dependencies are inferred from the claim text.