Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device

A digitally tuned capacitor (DTC) for use in an integrated circuit device, comprising:

• (a) a first RF terminal;
• (b) a second RF terminal;
• (c) a control word input adapted to receive a digital control word having a selected plurality of b bits, wherein the plurality of b digital control word bits are ordered in significance from a least significant bit (LSB) to a most significant bit (MSB), and wherein the digital control word selectively controls a capacitance applied between the first and second RF terminals;
• (d) a plurality of significant bit sub-circuits coupled in parallel between the first and second RF terminals, wherein the plurality of significant bit sub-circuits are ordered in significance from a least significant bit (LSB) sub-circuit to a most significant bit (MSB) sub-circuit, and wherein each significant bit sub-circuit is coupled to an associated and corresponding significant bit of the digital control word, in a one-to-one relationship, and wherein each significant bit sub-circuit comprises at least one unit cell and wherein the digital control word selectively controls a capacitance applied between the first and second RF terminals by selectively controlling switching operation of the significant bit sub-circuits.

A digitally tuned capacitor, DTC, for use in an integrated circuit device, comprising:

• (a) a first RF terminal;
• (b) a second RF terminal;
• (c) an input means receiving a control word having a selected plurality of b control word bits, wherein the control word selectively controls a capacitance applied between the first and second RF terminals;
• (d) a plurality of sub-circuits coupled in parallel between the first and second RF terminals, wherein each sub-circuit is coupled to an associated and corresponding control word bit, in a one-to-one relationship, and wherein each sub-circuit comprises:
• at least one unit cell, wherein the unit cell comprises a plurality of stacked switches coupled in series with one or more capacitors;
• wherein switching operation of the stacked switches is controlled by the associated and corresponding control word bit, and wherein the LSB sub-circuit comprises one unit cell, and each additional sub-circuit comprises a number of unit cells used in implementing its associated and corresponding sub-circuit, wherein all of the unit cells of each sub-circuit are coupled together in parallel having a first node coupled to the first RF terminal and a second node coupled to the second RF terminal;
• and wherein the control word selectively controls the capacitance applied between the first and second RF terminals by selectively controlling switching operation of the significant bit sub-circuits, wherein the capacitance applied between the first and second RF terminals by a selected sub-circuit is controlled by selectively turning ON stacked switches of the selected sub-circuit.

A digitally tuned capacitor, DTC, for use in an integrated circuit device, comprising:

• (a) a first RF terminal;
• (b) a second RF terminal;
• (c) an input means receiving a digital control word having a selected plurality of b digital control word bits, wherein the digital control word selectively controls a capacitance applied between the first and second RF terminals;
• (d) a plurality of sub-circuits coupled in parallel between the first and second RF terminals wherein each sub-circuit is coupled to an associated and corresponding control word bit, in a one-to-one relationship, and wherein each sub-circuit comprises:
• at least one unit cell, wherein the unit cell comprises a plurality of stacked switches coupled in series with one or more capacitors;
• wherein switching operation of the stacked switches is controlled by the associated and corresponding digital control word bit, and wherein the LSB sub-circuit comprises one unit cell, and each additional sub-circuit comprises a number of unit cells used in implementing its associated and corresponding sub-circuit, wherein all of the unit cells of each sub-circuit are coupled together in parallel having a first node coupled to the first RF terminal and a second node coupled to the second RF terminal;
• and wherein the digital control word selectively controls the capacitance applied between the first and second RF terminals by selectively controlling switching operation of the significant bit sub-circuits, wherein the capacitance applied between the first and second RF terminals by a selected sub-circuit is controlled by selectively turning ON stacked switches of the selected sub-circuit.

A digitally tuned capacitor, DTC, for use in an integrated circuit device, comprising:

• (a) a first RF terminal;
• (b) a second RF terminal;
• (c) an input means receiving a digital control word having a selected plurality of b digital control word bits, wherein the digital control word selectively controls a capacitance applied between the first and second RF terminals;
• (d) a plurality of sub-circuits coupled in parallel between the first and second RF terminals, wherein each sub-circuit is coupled to an associated and corresponding control word bit, in a one-to-one relationship, and wherein each sub-circuit comprises:
• at least one unit cell, wherein the unit cell comprises a plurality of stacked switches coupled in series with one or more capacitors;
• wherein switching operation of the stacked switches is controlled by the associated and corresponding digital control word bit, and wherein the LSB sub-circuit comprises one unit cell, and each additional sub-circuit comprises a number of unit cells used in implementing its associated and corresponding sub-circuit, wherein all of the unit cells of each sub-circuit are coupled together in parallel having a first node coupled to the first RF terminal and a second node coupled to the second RF terminal;
• and wherein the digital control word selectively controls the capacitance applied between the first and second RF terminals by selectively controlling switching operation of the significant bit sub-circuits, wherein the capacitance applied between the first and second RF terminals by a selected sub-circuit is controlled by selectively turning ON stacked switches of the selected sub-circuit.

A method of digitally tuning a capacitor in an integrated circuit device, comprising:

• (a) establishing electrical communication with a first RF terminal;
• (b) establishing electrical communication with a second RF terminal;
• (c) receiving a digital control having a selected plurality of b digital control bits;
• and
• (d) selectively controlling a capacitance applied between the first and second RF terminals;
• wherein the capacitance applied between the first and second RF terminals is controlled by coupling a plurality of sub-circuits in parallel between the first and second RF terminals, and wherein each sub-circuit is coupled to an associated and corresponding control bit, and wherein each sub-circuit comprises at least one unit cell, wherein the unit cell comprises a plurality of stacked switches coupled in series with one or more capacitors;
• wherein switching operation of the stacked switches is controlled by the associated and corresponding control bit, and wherein the LSB sub-circuit comprises one unit cell, and each additional sub-circuit comprises a number of unit cells used in implementing its associated and corresponding sub-circuit, and wherein all of the unit cells of each sub-circuit are coupled together in parallel having a first node coupled to the first RF terminal and a second node coupled to the second RF terminal;
• and wherein the digital control selectively controls the capacitance applied between the first and second RF terminals by selectively controlling switching operation of the stacked switches, wherein the capacitance applied between the first and second RF terminals by a selected sub-circuit is controlled by selectively turning ON stacked switches of the selected sub-circuit.

A digitally tuned capacitor, DTC, for use in an integrated circuit device, comprising:

• (a) a first RF terminal;
• (b) a second RF terminal;
• (c) an input means receiving a control word having a selected plurality of b control word bit, wherein the control word selectively controls a capacitance applied between the first and second RF terminals;
• (d) a plurality of sub-circuits coupled in parallel between the first and second RF terminals, wherein each sub-circuit is coupled to an associated and corresponding control word bit, in a one-to-one relationship, and wherein each sub-circuit comprises:
• at least one unit cell, wherein the unit cell comprises a plurality of stacked switches coupled in series with one or more capacitors;
• wherein switching operation of the stacked switches is controlled by the associated and corresponding control word bit, and wherein the LSB sub-circuit comprises one unit cell, and each additional sub-circuit comprises a number of unit cells used in implementing its associated and corresponding sub-circuit, wherein all of the unit cells of each sub-circuit are coupled together in parallel having a first node coupled to the first RF terminal and a second node coupled to the second RF terminal;
• and wherein the control word selectively controls the capacitance applied between the first and second RF terminals by selectively controlling switching operation of the significant bit sub-circuits, wherein the capacitance applied between the first and second RF terminals by a selected sub-circuit is controlled by selectively turning ON stacked switches of the selected sub-circuit.

A digitally tuned capacitor, DTC, for use in an integrated circuit device, comprising:

• (a) a first RF terminal;
• (b) a second RF terminal;
• (c) an input means receiving a digital control word having a selected plurality of b digital control word bits, wherein the digital control word selectively controls a capacitance applied between the first and second RF terminals;
• (d) a plurality of sub-circuits coupled in parallel between the first and second RF terminals, wherein each sub-circuit is coupled to an associated and corresponding control word bit, in a one-to-one relationship, and wherein each sub-circuit comprises:
• at least one unit cell, wherein the unit cell comprises a plurality of stacked switches coupled in series with one or more capacitors;
• wherein switching operation of the stacked switches is controlled by the associated and corresponding digital control word bit, and wherein the LSB sub-circuit comprises one unit cell, and each additional sub-circuit comprises a number of unit cells used in implementing its associated and corresponding sub-circuit, wherein all of the unit cells of each sub-circuit are coupled together in parallel having a first node coupled to the first RF terminal and a second node coupled to the second RF terminal;
• and wherein the digital control word selectively controls the capacitance applied between the first and second RF terminal by selectively controlling switching operation of the significant bit sub-circuits, wherein the capacitance applied between the first and second RF terminals by a selected sub-circuit is controlled by selectively turning ON stacked switches of the selected sub-circuit.

A method of digitally tuning a capacitor in an integrated circuit device, comprising:

• (a) establishing electrical communication with a first RF terminal;
• (b) establishing electrical communication with a second RF terminal;
• (c) receiving a digital control word having a selected plurality of b bits, wherein the plurality of b digital control word bits are ordered in significance from a least significant bit (LSB) to a most significant bit (MSB);
• and
• (d) selectively controlling a capacitance applied between the first and second RF terminals;
• wherein the capacitance applied between the first and second RF terminals is controlled by coupling a plurality of significant bit sub-circuits in parallel between the first and second RF terminals,
• and wherein the plurality of significant bit sub-circuits are ordered in significance from a least significant bit (LSB) sub-circuit to a most significant bit (MSB) sub-circuit, and wherein each significant bit sub-circuit is coupled to an associated and corresponding significant bit of the digital control word, in a one-to-one relationship, and wherein each significant bit sub-circuit comprises at least one unit cell, wherein the unit cell comprises a plurality of stacked switches coupled in series with a capacitor;
• wherein switching operation of the stacked switches is controlled by the associated and corresponding bit of the control word, and wherein the LSB sub-circuit comprises one unit cell, and each next significant bit sub-circuit comprises x times the number of instantiations of unit cells used in implementing its associated and corresponding previous less significant bit sub-circuit, wherein x is determined by a selected weighting coding scheme used to weight the sub-circuits, and wherein all of the unit cells of each sub-circuit are coupled together in parallel having a first node coupled to the first RF terminal and a second node coupled to the second RF terminal;
• and wherein the digital control word selectively controls a capacitance applied between the first and second RF terminals by selectively controlling switching operation of the stacked switches, wherein capacitance applied between the first and second RF terminals by a selected sub-circuit is controlled by selectively turning ON stacked switches of the selected sub-circuit.