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US 9,024,363 B2Granted
Photoelectric conversion apparatus and imaging system using the photoelectric conversion apparatus
AssigneeCanon Kabushiki Kaisha
InventorTakanori Watanabe
Life of this patent
Estimating the term…
Abstract
In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region constituting the charge holding portion extends from a reference surface including the light receiving surface of a photoelectric conversion element into a semiconductor substrate at a level equal to or deeper than the depth of the semiconductor region in comparison with the semiconductor region.
Claims12
A photoelectric conversion apparatus comprising:
- a semiconductor substrate;
- a photoelectric conversion portion including a first semiconductor region of a first conductivity type arranged in the semiconductor substrate;
- a charge holding portion including a second semiconductor region of the first conductivity type arranged in the semiconductor substrate and configured to hold a charge generated by the photoelectric conversion portion;
- a third semiconductor region of the first conductivity type arranged in the semiconductor substrate;
- a first gate electrode arranged on a region between the second semiconductor region and the third semiconductor region and configured to transfer a charge of the second semiconductor region into the third semiconductor region;
- and
- an isolation portion including a first part, a second part and a third part of an insulator, wherein
- the first semiconductor region is arranged between the first part of the insulator and the second semiconductor region in a first cross section including a first direction along which the first semiconductor region and the second semiconductor region are arranged,
- the second semiconductor region is arranged between the second part and the third part of the insulator in a second cross section including a second direction intersecting the first direction, and
- a part of the second part and a part of the third part of the insulator are arranged at a same depth as a bottom end of the second semiconductor region and/or at a depth lower than the second semiconductor region.
7 more elements
A photoelectric conversion apparatus comprising:
- a semiconductor substrate including an active region defined by an insulator portion;
- a photoelectric conversion portion including a first semiconductor region of a first conductivity type arranged in the active region;
- a charge holding portion including a second semiconductor region of the first conductivity type arranged in the active region and configured to hold a charge generated by the photoelectric conversion portion;
- a third semiconductor region of the first conductivity type arranged in the active region;
- a fourth semiconductor region of a second conductivity type arranged under the second semiconductor region;
- and
- a first gate electrode arranged on a region between the second semiconductor region and the third semiconductor region and configured to transfer a charge of the second semiconductor region into the third semiconductor region, wherein
- the insulator portion includes a first part, a second part and a third part,
- the first semiconductor region is arranged between the first part of the insulator portion and the second semiconductor region in a first cross section including a first direction along which the first semiconductor region and the second semiconductor region are arranged,
- the second semiconductor region is arranged between the second part and the third part of the insulator portion in a second cross section including a second direction intersecting the first direction, and
- a part of the second part and a part of the third part of the insulator portion are arranged at a same depth as the fourth semiconductor region.
8 more elements
A photoelectric conversion apparatus comprising:
- a semiconductor substrate;
- a photoelectric conversion portion including a first semiconductor region of a first conductivity type arranged in the semiconductor substrate;
- a charge holding portion including a second semiconductor region of the first conductivity type arranged in the semiconductor substrate and configured to hold a charge generated by the photoelectric conversion portion;
- a third semiconductor region of the first conductivity type arranged in the semiconductor substrate;
- a first gate electrode arranged on a region between the second semiconductor region and the third semiconductor region and configured to transfer a charge of the second semiconductor region into the third semiconductor region;
- a second gate electrode arranged on a region between the first semiconductor region and the second semiconductor region and configured to transfer a charge of the first semiconductor region into the second semiconductor region;
- and
- an isolation portion including an insulator, wherein
- a part of the isolation portion is arranged at a depth deeper than the second semiconductor region, and
- a part of the first semiconductor region is arranged at a depth deeper than the part of the isolation portion.
7 more elements
Dependencies are inferred from the claim text.