Efficient and compact visible microchip laser source with periodically poled nonlinear materials

A solid-state microchip laser source providing a frequency doubled visible output beam, the solid-state microchip laser comprising:

• a semiconductor diode pump laser providing a pump beam at a selected wavelength;
• and
• a microchip laser cavity assembly disposed to receive the pump beam, the laser cavity assembly comprising:
• two mirrors, each mirror defined by a coated surface, a solid-state gain element pumped by the semiconductor diode pump laser and disposed between said two mirrors, and
• a bulk, periodically poled nonlinear frequency doubling crystal disposed between the two mirrors, the crystal being selected from the group consisting of:
• periodically poled MgO-doped LiNbO3, periodically poled MgO-doped LiTaO3, periodically poled ZnO-doped LiNbO3, periodically poled ZnO-doped LiTaO3, periodically poled stoichiometric LiNbO3, and periodically poled stoichiometric LiTaO3,
• wherein the microchip laser cavity assembly is formed by a monolithic bonding of the gain element and the nonlinear frequency doubling crystal, and the two mirrors are provided by the optical coatings on end surfaces of the gain element and the nonlinear frequency doubling crystal, and
• wherein relative directions of crystallographic axes of the gain element and the nonlinear frequency doubling crystal are selected to maximize a stable and efficient output into the frequency doubled visible beam, wherein the total length of the microchip laser cavity assembly is selected so as to support operation in substantially a single longitudinal mode.

A solid-state microchip laser source providing a frequency doubled visible output beam, the solid-state microchip laser comprising:

• a semiconductor diode pump laser providing a pump beam at a selected wavelength;
• and
• a microchip laser cavity assembly disposed to receive the pump beam, the laser cavity assembly comprising:
• two mirrors, each mirror defined by a coated surface, a solid-state gain element pumped by the semiconductor diode pump laser and disposed between said two mirrors, and
• a bulk, periodically poled nonlinear frequency doubling crystal disposed between the two mirrors, the crystal being selected from the group consisting of:
• periodically poled MgO-doped LiNbO3, periodically poled MgO-doped LiTaO3, periodically poled ZnO-doped LiNbO3, periodically poled ZnO-doped LiTaO3, periodically poled stoichiometric LiNbO3, and periodically poled stoichiometric LiTaO3,
• wherein the microchip laser cavity assembly is formed by a monolithic bonding of the gain element and the nonlinear frequency doubling crystal, and the two mirrors are provided by the optical coatings on end surfaces of the gain element and the nonlinear frequency doubling crystal, and
• wherein relative directions of crystallographic axes of the gain element and the nonlinear frequency doubling crystal are selected to maximize a stable and efficient output into the frequency doubled visible beam, further comprising:
• one or more supporting plates fixedly attached to side surfaces of the monolithically bonded gain element and nonlinear frequency doubling crystal to provide mechanical rigidity for the microchip laser cavity assembly.

A solid-state microchip laser source providing a frequency doubled visible output beam, the solid-state microchip laser comprising:

• a semiconductor diode pump laser providing a pump beam at a selected wavelength;
• and
• a microchip laser cavity assembly disposed to receive the pump beam, the laser cavity assembly comprising:
• two mirrors, each mirror defined by a coated surface, a solid-state gain element pumped by the semiconductor diode pump laser and disposed between said two mirrors, and
• a bulk, periodically poled nonlinear frequency doubling crystal disposed between the two mirrors, the crystal being selected from the group consisting of:
• periodically poled MgO-doped LiNbO3, periodically poled MgO-doped LiTaO3, periodically poled ZnO-doped LiNbO3, periodically poled ZnO-doped LiTaO3, periodically poled stoichiometric LiNbO3, and periodically poled stoichiometric LiTaO3,
• wherein the microchip laser cavity assembly is formed by a monolithic bonding of the gain element and the nonlinear frequency doubling crystal, and the two mirrors are provided by the optical coatings on end surfaces of the gain element and the nonlinear frequency doubling crystal, and
• wherein relative directions of crystallographic axes of the gain element and the nonlinear frequency doubling crystal are selected to maximize a stable and efficient output into the frequency doubled visible beam,
• wherein the nonlinear frequency doubling crystal has a periodicity of poling that is perturbed,
• wherein the nonlinear frequency doubling crystal comprises a segment without periodic poling structure.

A solid-state microchip laser source providing a frequency doubled visible output beam, the solid-state microchip laser comprising:

• a semiconductor diode pump laser providing a pump beam at a selected wavelength;
• and
• a microchip laser cavity assembly disposed to receive the pump beam, the laser cavity assembly comprising:
• two mirrors, each mirror defined by a coated surface, a solid-state gain element pumped by the semiconductor diode pump laser and disposed between said two mirrors, and
• a bulk, periodically poled nonlinear frequency doubling crystal disposed between the two mirrors, the crystal being selected from the group consisting of:
• periodically poled MgO-doped LiNbO3, periodically poled MgO-doped LiTaO3, periodically poled ZnO-doped LiNbO3, periodically poled ZnO-doped LiTaO3, periodically poled stoichiometric LiNbO3, and periodically poled stoichiometric LiTaO3,
• wherein the microchip laser cavity assembly is formed by a monolithic bonding of the gain element and the nonlinear frequency doubling crystal, and the two mirrors are provided by the optical coatings on end surfaces of the gain element and the nonlinear frequency doubling crystal, and
• wherein relative directions of crystallographic axes of the gain element and the nonlinear frequency doubling crystal are selected to maximize a stable and efficient output into the frequency doubled visible beam,
• an optical bench platform, the semiconductor diode pump laser and the nonlinear frequency doubling crystal being integrated on the optical bench platform;
• and
• a package having an output aperture for the output beam and being integrated with the optical bench, the package enclosing and providing heat sinking for the semiconductor diode pump laser, the microchip laser cavity assembly, and the optical bench platform.