Apparatus with light emitting or absorbing diodes

An apparatus comprising:

• a plurality of diodes, each diode of the plurality of diodes comprising:
• a light emitting or absorbing region having a lateral dimension between 10 microns to 40 microns and a height between 2 to 7 microns;
• a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height less than 6 microns;
• and
• a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height less than 6 microns;
• wherein each diode of the plurality of diodes is substantially hexagonal laterally, has a lateral dimension between 10 to 50 microns measured opposing face-to-face, and a height between 5 to 25 microns;
• one or more first conductors coupled to a first plurality of first terminals of the plurality of diodes;
• a first dielectric layer coupled to the one or more first conductors;
• and
• one or more second conductors coupled to a first plurality of second terminals of the plurality of diodes.

An apparatus comprising:

• a substantially optically transmissive base;
• a plurality of diodes, each diode of the plurality of diodes comprising:
• a light emitting or absorbing region having a lateral dimension between 10 microns to 50 microns and a height between 2 to 7 microns;
• a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height less than about 6 microns;
• and
• a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height less than 6 microns;
• wherein each diode of the plurality of diodes is substantially hexagonal laterally, has a lateral dimension between 10 to 50 microns measured opposing face-to-face, and a height between 5 to 25 microns;
• and
• wherein each diode of the plurality of diodes comprises at least one inorganic semiconductor selected from the group consisting of:
• silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAIGaP, AlInGaAs, InGaNAs, and AlInGaSb;
• a plurality of substantially optically transparent and chemically inert particles, each inert particle of the plurality of substantially optically transparent and chemically inert particles between 10 to 50 microns;
• one or more first conductors coupled to a first plurality of first terminals of the plurality of diodes;
• a first dielectric layer coupled to the one or more first conductors;
• and
• one or more second conductors coupled to a first plurality of second terminals of the plurality of diodes.

A lighting apparatus comprising:

• a flexible base having an adhesive on a first side;
• a plurality of first conductors coupled to the base;
• a plurality of light emitting diodes distributed substantially randomly and in parallel on a first conductor of the plurality of first conductors, at least some of the plurality of light emitting diodes having a first, forward-bias orientation and at least one of the plurality of light emitting diodes having a second, reverse-bias orientation;
• at least one second conductor coupled to the plurality of diodes and coupled to a second conductor of the plurality of first conductors;
• a luminescent layer coupled to the at least one second conductor or an intervening stabilization layer;
• a protective coating coupled to the luminescent layer;
• an electrical interface coupled to the plurality of first conductors;
• and
• optionally a power source couplable to the electrical interface.

A lighting apparatus comprising:

• a translucent or transparent housing;
• an electrical interface coupled to the housing and couplable to a power source;
• a base;
• a plurality of first conductors coupled to the base and coupled to the electrical interface;
• a plurality of light emitting diodes distributed substantially randomly and in parallel on a first conductor of the plurality of first conductors, at least some of the plurality of light emitting diodes having a first, forward-bias orientation and at least one of the plurality of light emitting diodes having a second, reverse-bias orientation;
• at least one second conductor coupled to the plurality of diodes and coupled to a second conductor of the plurality of first conductors;
• a luminescent layer coupled to the at least one second conductor or an intervening stabilization layer;
• and
• a protective coating coupled to the luminescent layer.