# US 9,018,771 B2 · Thin film apparatus

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- Number: US 9,018,771 B2
- Document ID: US9018771B2
- Status: Granted
- Kind: B2
- Application number: 14/200,905
- Filed: 2014-03-07
- Published: 2014-09-11
- Granted: 2015-04-28
- Earliest claimed: 2013-03-08
- Assignees: Sensor Tek, LLC
- Applicants: SenseTech Co., Ltd
- Inventors: Po-Wei Lu; Mao-Chen Liu; Wen-Chieh Chou; Chun-Chieh Wang; Shu-Yi Weng
- Web page: https://patentgrep.com/patent/US9018771B2

## CPC

- H10D 62/40: Crystalline structures
- B81B 3/007: {For controlling stiffness, e.g. ribs}
- C30B 29/06: Silicon
- G01L 9/005: {Non square semiconductive diaphragm}
- H10D 84/00: Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- G01L: MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE (weighing G01G)

## Abstract

A thin film apparatus having a plurality of thin film cells is disclosed. Each thin film cell includes a crystalline layer and a surrounding layer. The crystalline layer has a shape of polygon. The surrounding layer is partially located on the crystalline layer. The crystalline layer is surrounded by the surrounding layer.

## Claims

### Claim 1

A thin film apparatus, comprising a plurality of thin film units each of which comprises:
a crystalline layer which is polygonal;
a surrounding layer, surrounding and partially being located on the crystalline layer; and
an articulation layer which is located on a second surface of the surrounding layer, has an opening exposing a part of the crystalline layer uncovered by a first surface of the surrounding layer opposite to the second surface of the surrounding layer, and is configured to connect the plurality of thin film units with each other.

### Claim 2 (depends on 1)

The thin film apparatus according to claim 1, wherein the articulation layer is made of metal.

### Claim 3 (depends on 1)

The thin film apparatus according to claim 1, wherein the crystalline layer contains polycrystalline silicon.

### Claim 4 (depends on 1)

The thin film apparatus according to claim 1, wherein the crystalline layer is regular-hexagonal.

### Claim 5 (depends on 1)

The thin film apparatus according to claim 1, wherein the surrounding layer contains tungsten.