Method for manufacturing solid-state image pickup device
AssigneeCanon Kabushiki Kaisha
InventorsKouhei Hashimoto, Masatsugu Itahashi
Life of this patent
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Abstract
A method for manufacturing a solid-state image pickup device that includes a pixel portion and a peripheral circuit portion, includes: forming a first insulating film in the pixel portion and the peripheral circuit portion, forming a second insulating film above the first insulating film, etching the second insulating film in photoelectric conversion elements, forming a metal film on the etched second insulating film in the photoelectric conversion elements and on the second insulating film in the peripheral circuit portion, and removing the metal film in the peripheral circuit portion and forming light-shielding films from the metal film in the photoelectric conversion elements.
Claims18
A solid-state image pickup device having a pixel portion in which a photoelectric conversion unit and a charge holding unit are arranged, and having a peripheral circuit portion in the vicinity of the pixel portion and including a transistor, the image pickup device comprising:
- a first insulating film provided on the charge holding unit and the transistor;
- a light-shielding film provided on the first insulating film which is provided on the charge holding unit;
- wherein a thickness of the first insulating film provided on the charge holding unit is smaller than a thickness of the first insulating film provided on the transistor.
A solid-state image pickup device having a pixel portion in which a photoelectric conversion unit for focus detection is arranged, and having a peripheral circuit portion in the vicinity of the pixel portion and including a transistor, the image pickup device comprising:
- a first insulating film provided on the photoelectric conversion unit and the transistor;
- and
- a light-shielding film having a slit and provided on the first insulating film which is provided on the photoelectric conversion unit,
- wherein a thickness of the first insulating film provided on the photoelectric conversion unit is smaller than a thickness of the first insulating film provided on the transistor.
Dependencies are inferred from the claim text.