Semiconductor reaction chamber with plasma capabilities

A processing chamber comprising:

• a reaction chamber having a processing area;
• a processing gas inlet in communication with the processing area;
• a first excited species generation zone in communication with the processing gas inlet;
• and,
• a second excited species generation zone in communication with the processing gas inlet,
• wherein the first and second excited species generation zones each further comprise an inductively coupled plasma generator or a capactively coupled plasma generator,
• wherein the first and second excited species generation zones inductively coupled plasma generators are each separately controlled, or
• wherein the first and second excited species generation zones capacitively coupled plasma generators are each separately controlled.

A processing chamber comprising:

• a reaction chamber having a processing area;
• a processing gas inlet in communication with the processing area;
• a first excited species generation zone in communication with the processing gas inlet;
• and,
• a second excited species generation zone in communication with the processing gas inlet,
• wherein the first and second excited species generation zones are co-axially aligned.