Method for integrating low-k dielectrics

A method of integrating a dielectric film on a substrate, comprising:

• preparing a dielectric film on a substrate, said dielectric film being a low-k dielectric film having a dielectric constant less than or equal to a value of about 4;
• performing a preliminary curing process on said dielectric film;
• forming a pattern in said dielectric film using a lithographic process and an etching process;
• removing undesired residues, occurring as a result of the forming said pattern, from a side wall surface of the pattern in said dielectric film by directly irradiating said undesired residues on the side wall surface of the pattern at least with infrared (IR) radiation;
• and
• after said removing step, performing a final curing process on said dielectric film, said final curing process includes irradiating said substrate with at least one of said infrared (IR) radiation and ultraviolet (UV) radiation.