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US 9,013,917 B2Granted
Semiconductor memory device
AssigneeSK hynix Inc.
InventorHee Bok Kang
Life of this patent
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Abstract
A semiconductor memory device is disclosed, which relates to a technology for a serial cell structure of a phase change memory (PCM). The semiconductor memory device includes a plurality of unit cells stacked with a plurality of layers, and a single bit line formed to have a vertical structure and shared by the plurality of unit cells. Each unit cell includes a switching element including a source region, a drain region, and a channel region, and a phase change resistor (PCR) element formed over the switching element.
Claims20
A semiconductor memory device, comprising:
- a first plurality of unit cells sequentially stacked in a plurality of layers;
- and
- a bit line having a vertical structure and coupled to each of the first plurality of unit cells,
- wherein each of the first plurality of unit cells includes:
- a switching element including a source region, a drain region, and a channel region;
- and
- a phase change resistor (PCR) element formed over the switching element.
4 more elements
A semiconductor memory device, comprising:
- a first plurality of unit cells sequentially stacked in a plurality of layers;
- and
- a single bit line having a vertical structure and shared by the first plurality of unit cells,
- wherein each of the first plurality of unit cells includes:
- a switching element including an emitter region, a collector region, and a base region, and
- a phase change resistor (PCR) element formed over the switching element.
3 more elements
Dependencies are inferred from the claim text.