Semiconductor memory device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsTakuo Ohashi, Fumiki Aiso
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Abstract
According to one embodiment, a semiconductor memory device includes an insulating film with a recess formed in an upper surface, and a conductive film provided on the insulating film and containing silicon, carbon and an impurity serving as an acceptor or donor for silicon. Carbon concentration of a first portion of the conductive film in contact with the insulating film is lower than carbon concentration of a second portion of the conductive film located in the recess and being equidistant from the insulating film placed on both sides thereof.
Claims15
A semiconductor memory device comprising:
- an insulating film with a recess formed in an upper surface;
- and
- a conductive film provided on the insulating film and containing silicon, carbon and an impurity serving as an acceptor or donor for silicon,
- carbon concentration of a first portion of the conductive film in contact with the insulating film being lower than carbon concentration of a second portion of the conductive film located in the recess and being equidistant from the insulating film placed on both sides thereof.
A method for manufacturing a semiconductor memory device, comprising:
- depositing silicon on an insulating film with a recess formed in an upper surface while introducing carbon and an impurity serving as an acceptor or donor for silicon,
- in the depositing silicon, amount of introduction of carbon at a first time being smaller than amount of introduction of carbon at a second time later than the first time.
Dependencies are inferred from the claim text.