# US 9,006,931 B2 · Static-electrical-field-enhanced semiconductor-based devices and methods of enhancing semiconductor-based device performance > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,006,931 B2 - Document ID: US9006931B2 - Status: Granted - Kind: B2 - Application number: 13/510,427 - Filed: 2010-12-01 - Published: 2013-03-07 - Granted: 2015-04-14 - Earliest claimed: 2009-12-02 - Assignees: Versatilis LLC - Applicants: Ajaykumar R. Jain - Inventors: Ajaykumar R. Jain - Web page: https://patentgrep.com/patent/US9006931B2 ## CPC - H10F 77/311: {for photovoltaic cells} - H10F 10/10: having potential barriers - H10K 30/50: Photovoltaic [PV] devices - Y02E 10/549: Organic PV cells - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract Devices that include one or more functional semiconductor elements that are immersed in static electric fields (E-fields). In one embodiment, one or more electrets are placed proximate the one or more organic, inorganic, or hybrid semiconductor elements so that the static charge(s) of the electret(s) participate in creating the static E-field(s) that influences the semiconductor element(s). An externally applied electric field can be used, for example, to enhance charge-carrier mobility in the semiconductor element and/or to vary the width of the depletion region in the semiconductor material. ## Claims ### Claim 1 A device, comprising: a functional semiconductor element providing, during use, at least one of 1) an electrical function and 2) an opto electrical function; and a static-field source that produces a static electric field and includes at least one electret, said static-field source designed, configured and located in fixed relation relative to said functional semiconductor element so that said static electric field enhances carrier mobility within said functional semiconductor element; wherein said functional semiconductor element has a first side and a second side spaced from said first side said static-field source including a mono-polar electret located on said first side and a grounded body located on said second side. ### Claim 2 (depends on 1) A device according to claim 1, further comprising a first electrode disposed over said first side of said functional semiconductor element, wherein said first electrode contains at least one E-field window that allows said static electric field to exist across said functional semiconductor element. ### Claim 3 (depends on 2) A device according to claim 2, wherein said at least one E-field window includes openings in said first electrode and said openings contain portions of said mono-polar electret. ### Claim 4 (depends on 2) A device according to claim 2, further comprising a second electrode disposed over said second side of said functional semiconductor element, wherein said second electrode contains at least one E-field window that allows said static electric field to exist across said functional semiconductor element, said second electrode being electrically insulated from said grounded body. ### Claim 5 (depends on 1) A device according to claim 1, further comprising charging circuitry in electrical communication with said at least one electret and designed and configured to periodically rejuvenate static electrical charge in said at least one electret. ### Claim 6 (depends on 1) A device according to claim 1, wherein said functional semiconductor element has a first side and a second side spaced from said first side, said static-field source including a first mono-polar electret located on said first side and a second mono-polar electret located on said second side, wherein said first and second mono-polar electrets are of opposite polarities. ### Claim 7 (depends on 1) A device according to claim 1, wherein said functional semiconductor element comprises a non-monocrystalline semiconductor body. ### Claim 8 (depends on 7) A device according to claim 7, wherein said non-monocrystalline semiconductor body is a single layer comprising a p-region and an n-region together forming a p-n junction. ### Claim 9 (depends on 7) A device according to claim 7, wherein said non-monocrystalline semiconductor body comprises a p-layer and an n-layer together forming a p-n junction. ### Claim 10 (depends on 7) A device according to claim 7, wherein said non-monocrystalline semiconductor body is a polycrystalline semiconductor body made of an inorganic semiconductor material. ### Claim 11 (depends on 7) A device according to claim 7, wherein said non-monocrystalline semiconductor body is made of an organic semiconductor material. ### Claim 12 (depends on 1) A device according to claim 1, wherein said functional semiconductor element is a photovoltaic cell. ### Claim 13 (depends on 1) A device according to claim 1, wherein said functional semiconductor element is a light-emitting diode. ### Claim 14 A device, comprising: a functional semiconductor element that includes a donor material, an acceptor material, and a carrier-depletion region formed within said donor and acceptor materials and having a width, said functional semiconductor element providing, during use, at least one of 1) an electrical function and 2) an optoelectrical function; and a static-field source that produces a static electric field, said electric field source located in fixed relation relative to said functional semiconductor element so as to control said width of said depletion region; wherein said functional semiconductor element second side spaced from said first side, said static-field source including a mono-polar electret located on said first side and a grounded body located on said second side. ### Claim 15 (depends on 14) A device according to claim 14, further comprising a first electrode disposed over said first side of said functional semiconductor element, wherein said first electrode contains at least one E-field window that allows said static electric field to exist across said functional semiconductor element. ### Claim 16 (depends on 15) A device according to claim 15, wherein said at least one E-field window includes openings in said first electrode and said openings contain portions of said mono-polar electret. ### Claim 17 (depends on 15) A device according to claim 15, further comprising a second electrode disposed over said second side of said functional semiconductor element, wherein said second electrode contains at least one E-field window that allows said static electric field to exist across said functional semiconductor element, said second electrode being electrically insulated from said grounded body. ### Claim 18 (depends on 14) A device according to claim 14, further comprising charging circuitry in electrical communication with said at least one electret and designed and configured to periodically rejuvenate static electrical charge in said at least one electret. ### Claim 19 (depends on 14) A device according to claim 14, wherein said functional semiconductor element has a first side and a second side spaced from said first side, said static-field source including a first mono-polar electret located on said first side and a second mono-polar electret located on said second side, wherein said first and second mono-polar electrets are of opposite polarities. ### Claim 20 (depends on 14) A device according to claim 14, wherein said functional semiconductor element comprises a non-monocrystalline semiconductor body, wherein said depletion region is contained in said non-monocrystalline semiconductor body. ### Claim 21 (depends on 20) A device according to claim 20, wherein said non-monocrystalline semiconductor body is a polycrystalline semiconductor body made of an inorganic semiconductor material. ### Claim 22 (depends on 20) A device according to claim 20, wherein said non-monocrystalline semiconductor body is made of an organic semiconductor material. ### Claim 23 (depends on 14) A device according to claim 14, wherein said functional semiconductor element is a photovoltaic cell. ### Claim 24 (depends on 14) A device according to claim 14, wherein said functional semiconductor element is a light-emitting diode. ### Claim 25 A photovoltaic-cell device, comprising: a photovoltaic cell that includes: a semiconductor body containing donor and acceptor materials and having a first side and a second side spaced from said first side; a first ohmic contact in electrical communication with said semiconductor body on said first side; a second ohmic contact in electrical communication with said semiconductor body on said second side; and an electrical-field source designed and configured to apply a static electric field across said semiconductor body, said electrical-field source including: a first electret located on said first side of said semiconductor body; and a second electret located on said second side of said semiconductor body; wherein each of said first and second ohmic contacts is designed and configured to allow said static electric field to be present across said semiconductor body. ### Claim 26 (depends on 25) A photovoltaic-cell device according to claim 25, wherein said semiconductor body comprises a non-monocrystalline semiconductor material. ### Claim 27 (depends on 26) A photovoltaic-cell device according to claim 26, wherein said non-monocrystalline semiconductor material is an organic semiconductor material. ### Claim 28 (depends on 25) A photovoltaic-cell device according to claim 25, wherein said semiconductor body contains a charge-depletion region having a width, and said static electric field has a strength selected as a function of said width. ### Claim 29 (depends on 25) A photovoltaic-cell device according to claim 25, further comprising charging circuitry designed and configured to periodically rejuvenate electrical charge of said electrical-field source. ### Claim 30 A method of enhancing performance of a functional semiconductor element, comprising: providing the functional semiconductor element; and locating an electret-based electric field source proximate the functional semiconductor element so as to immerse said functional semiconductor element in a static electric field from the electret-based electric field source so as to enhance performance of the functional semiconductor element; wherein said providing the functional semiconductor element includes providing a solar cell. ### Claim 31 (depends on 30) A method according to claim 30, wherein said providing the solar cell includes providing an organic-semiconductor-based solar cell. ### Claim 32 (depends on 30) A method according to claim 30, wherein said providing the solar cell includes providing an inorganic-semiconductor-based solar cell. ### Claim 33 (depends on 30) A method according to claim 30, wherein the functional semiconductor element is formed in a body having first and second side spaced from one another and said locating the electret-based electric field source proximate the functional semiconductor element includes locating a first electret on the first side of the body. ### Claim 34 (depends on 30) A method according to claim 30, further including providing charging circuitry designed and configured to periodically recharge the electret-based electric field source. ### Claim 35 A method of enhancing performance of a functional semiconductor element, comprising: providing the functional semiconductor element; and locating an electret-based electric field source proximate the functional semiconductor element so as to immerse said functional semiconductor element in a static electric field from the electret-based electric field source so as to enhance performance of the functional semiconductor element; wherein said providing the functional semiconductor element includes providing a light-emitting diode. ### Claim 36 (depends on 35) A method according to claim 35, further including providing charging circuitry designed and configured to periodically recharge the electret-based electric field source. ### Claim 37 A method of modulating the width of a depletion region in a functional semiconductor element, comprising: providing the functional semiconductor element having the depletion region straddling a junction between a p-type semiconductor material and an n-type semiconductor material; and immersing the functional semiconductor element in a static electric field for the purpose of modulating the width of the depletion region; wherein: the functional semiconductor element is formed in a body having first and second spaced from one another on opposing sides of the junction, and said immersing the functional semiconductor element in the static electric field includes locating a first electret proximate the functional. semiconductor element on the first side of the functional semiconductor element; and said immersing the functional semiconductor element in the static electric field includes locating a second electret proximate the functional semiconductor element on the second side of the functional semiconductor element. ### Claim 38 A method of modulating the width of a depletion region in a functional semiconductor element, comprising: providing the functional semiconductor element having the depletion region straddling a junction between a p-type semiconductor material and an n-type semiconductor material: and immersing the functional semiconductor element in a static electric field for the purposeof modulating the width of the depletion region; wherein said providing the functional semiconductor element includes providing a solar cell. ### Claim 39 A method of modulating the width of a depletion region in a functional semiconductor element, comprising: providing the functional semiconductor element having the depletion region straddling a junction between a p-type semiconductor material and an n-type semiconductor material: and immersin the functional semiconductor element in a static electric field for the purpose of modulating the width of the depletion region; wherein said providing the functional semiconductor element includes providing a light-emitting diode.