Semiconductor memory device and method of fabricating the same
AssigneeSamsung Electronis Co., Ltd.
InventorJae-Hwan Han
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AssigneeSamsung Electronis Co., Ltd.
InventorJae-Hwan Han
Estimating the term…
Provided is a semiconductor device and method of fabricating the semiconductor memory device. The semiconductor device may be formed by forming a first welding groove along outside edges of one case of a pair of upper and lower cases, forming a first welding protrusion along outside edges of the other case, the first welding protrusion being formed to correspond to the first welding groove and having a volume larger than a volume of the first welding groove. The method may further include inserting the first welding protrusion into the first welding groove to enclose a memory module in an inner accommodating space of the upper and lower cases, melting the first welding protrusion so that a first portion of the first welding protrusion fills the first welding groove and a second portion of the first welding protrusion fills a space between welding portions of the upper case and the lower case, and solidifying the first and second portions of the first welding protrusion.
A case for holding a memory device comprising:
A case for holding a memory device comprising:
A semiconductor memory assembly comprising:
Dependencies are inferred from the claim text.