# US 9,006,712 B2 · Organic memory element

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- Number: US 9,006,712 B2
- Document ID: US9006712B2
- Status: Granted
- Kind: B2
- Application number: 13/275,963
- Filed: 2011-10-18
- Published: 2012-09-20
- Granted: 2015-04-14
- Earliest claimed: 2011-03-16
- Assignees: Novaled GmbH
- Applicants: Philipp Sebastian; Bjoern Luessem; Karl Leo
- Inventors: Philipp Sebastian; Bjoern Luessem; Karl Leo
- Web page: https://patentgrep.com/patent/US9006712B2

## CPC

- H10K 10/50: Bistable switching devices
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- H10K 85/211: {Fullerenes, e.g. C60}
- H10K 85/30: Coordination compounds
- H10K 85/324: {comprising aluminium, e.g. Alq3}
- H10K 85/621: {Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide}
- H10K 2102/103: {comprising indium oxides, e.g. ITO}
- Y10S 977/943: Information storage or retrieval using nanostructure
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

The invention relates to an organic memory with an electrode and a counter-electrode, comprising at least one oxide layer, an electrically undoped organic layer and an electrically doped organic layer between the electrode and the counter-electrode, wherein the oxide layer is adjacent to the electrode and the undoped organic layer.

## Claims

### Claim 1

An organic memory element comprising an electrode, a counter-electrode, and a stack of layers arranged between the electrode and the counter electrode, wherein the stack of layers consists of an oxide layer, an electrically undoped organic layer, and an electrically doped organic layer, wherein the oxide layer is arranged adjacent to the electrode and the electrically undoped organic layer, and wherein the interface of the electrically undoped organic layer with the oxide layer is capable of storing charges, wherein the charges alter the element's electrical conductivity and are produced via the electrically doped organic layer.

### Claim 2 (depends on 1)

The organic memory element according to claim 1, wherein the electrically doped organic layer comprises an electrically conductive layer capable of introducing injected charge carriers into the element.

### Claim 3 (depends on 1)

The organic memory element according to claim 1, wherein the electrically undoped organic layer and the electrically doped organic layer comprise a fullerene compound.

### Claim 4 (depends on 1)

The organic memory element according to claim 1, wherein the electrically undoped organic layer and the electrically doped organic layer comprise fullerene or a fullerene derivative.

### Claim 5 (depends on 4)

The organic memory element according to claim 4, wherein the fullerene comprises C60 or C70.

### Claim 6 (depends on 1)

The organic memory element according to claim 1, wherein the one oxide layer comprises a metal oxide, a transitional metal oxide, or a semi-metal oxide.

### Claim 7 (depends on 1)

The organic memory element according to claim 1, wherein the oxide layer comprises Al2O3, SiO2, or HfO2.

### Claim 8

An organic memory element comprising an electrode, a counter electrode, and a stack of layers arranged between the electrode and the counter electrode, wherein the stack of layers consists of an oxide layer, an electrically undoped organic layer, an electrically doped organic layer, and a buffer layer, wherein the oxide layer is arranged adjacent to the electrode and the electrically undoped layer, and wherein the buffer layer is arranged between the electrically doped organic layer and the electrically undoped layer.