# US 9,006,110 B1 · Method for fabricating patterned structure of semiconductor device

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- Number: US 9,006,110 B1
- Document ID: US9006110B1
- Status: Granted
- Kind: B1
- Application number: 14/074,720
- Filed: 2013-11-08
- Granted: 2015-04-14
- Earliest claimed: 2013-11-08
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Chien-Ying Sun; En-Chiuan Liou; Jia-Rong Wu; Ching-Wen Hung
- Web page: https://patentgrep.com/patent/US9006110B1

## CPC

- H10P 50/642: {Chemical etching}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10P 50/693: {characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for fabricating a patterned structure of a semiconductor device includes: forming first mandrels and second mandrels on a substrate, wherein a first spacing is defined between the two adjacent first mandrels and a second spacing is defined between the two adjacent second mandrels, the first spacing being wider than the second spacing; forming a cover layer to cover the first mandrels while exposing the second mandrels; etching the cover layer and the second mandrels; removing the cover layer; concurrently forming first spacers on the sides of the first mandrels and a second spacers on the sides of the second mandrels after removing the cover layer; and transferring a layout of the first and second spacers to the substrate so as to form fin-shaped structures.

## Claims

### Claim 1

A method for fabricating a patterned structure of a semiconductor device, comprising:
forming a plurality of first mandrels and a plurality of second mandrels on a substrate, wherein a first spacing is defined between the two adjacent first mandrels and a second spacing is defined between the two adjacent second mandrels, the first spacing being wider than the second spacing, and the widths of the first mandrels are equal to the widths of the second mandrels;
forming a cover layer to cover the first mandrels while exposing the second mandrels;
etching the exposed second mandrels;
removing the cover layer;
concurrently forming a plurality of first spacers on the sides of the first mandrels and a plurality of second spacers on the sides of the second mandrels after removing the cover layer; and
transferring a layout of the first and second spacers to the substrate, so as to form a plurality of fin-shaped structures.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the first mandrels constitute a low density pattern and the second mandrels constitute a high density pattern.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the cover layer is a photoresist layer.

### Claim 4 (depends on 1)

The method according to claim 1, wherein a step for etching the cover layer and the second mandrels comprises an anisotropic etching process.

### Claim 5 (depends on 1)

The method according to claim 1, wherein a step for forming the first spacers and the second spacers comprises:
forming a spacer material to entirely cover the first mandrels, the second mandrel, and the substrate; and
etching the spacer material.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the widths of the first spacers are greater than the widths of the second spacers.

### Claim 7 (depends on 1)

The method according to claim 1, further comprising forming a mask layer on the substrate before forming the first mandrels and the second mandrels.

### Claim 8 (depends on 7)

The method according to claim 7, further comprising transferring the layout of the first and second spacers to the mask layer, and then transferring the layout of the mask layer to the substrate.

### Claim 9 (depends on 1)

The method according to claim 1, wherein the widths of the fin-shaped structures are all equal.

### Claim 10 (depends on 1)

The method according to claim 1, further comprising:
forming a plurality of third mandrels on the substrate during a step for forming the first and second mandrels, wherein a third spacing is defined between the two adjacent third mandrels, the third spacing being narrower than the first spacing and the second spacing;
forming another cover layer to cover the first mandrels and the second mandrels while exposing the third mandrels;
etching the exposed third mandrels;
concurrently forming a plurality of third spacers on the sides of the third mandrels during a step for forming the first spacers and the second spacers; and
transferring a layout of the first, second, and third spacers to the substrate.

### Claim 11 (depends on 10)

The method according to claim 10, wherein the widths of the first, the second, and the third mandrels are all equal.

### Claim 12 (depends on 10)

The method according to claim 10, wherein the first mandrels constitute a low density pattern, the second mandrels constitute a moderate density pattern, and the third mandrels constitute a high density pattern.

### Claim 13 (depends on 10)

The method according to claim 10, wherein the widths of both the first and the second spacers are greater than the widths of the third spacers.

### Claim 14 (depends on 10)

The method according to claim 10, wherein a step for forming the third spacers comprises:
forming a spacer material to entirely cover the first mandrels, the second mandrel, the third mandrel, and the substrate; and
etching the spacer material until the substrate is exposed.

### Claim 15 (depends on 10)

The method according to claim 10, further comprising forming a mask layer on the substrate before forming the first mandrels, the second mandrels and the third mandrels.

### Claim 16 (depends on 10)

The method according to claim 10, further comprising transferring the layout of the first, second and third spacers to the mask layer.

### Claim 17 (depends on 10)

The method according to claim 10, wherein the widths of the fin-shaped structures are all equal.