# US 9,006,109 B2 · Semiconductor devices and methods for manufacturing semiconductor devices

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- Number: US 9,006,109 B2
- Document ID: US9006109B2
- Status: Granted
- Kind: B2
- Application number: 13/851,691
- Filed: 2013-03-27
- Published: 2014-10-02
- Granted: 2015-04-14
- Earliest claimed: 2013-03-27
- Assignees: Infineon Technologies AG
- Applicants: Infineon Technologies AG
- Inventors: Manfred Engelhardt; Martin Zgaga
- Web page: https://patentgrep.com/patent/US9006109B2

## CPC

- B81B 3/001: {Structures having a reduced contact area, e.g. with bumps or with a textured surface}
- B81B 3/0051: {For defining the movement, i.e. structures that guide or limit the movement of an element (mechanical arrangements for preventing or damping vibration or shock H01H3/60)}
- B81C 1/00531: {Dry etching}
- B81C 1/00626: {Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619}
- H10P 50/244: {comprising alternated and repeated etching and passivation steps}
- B81C 2201/0112: Bosch process
- B81C 2201/0132: Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method includes a step of performing a time multiplexed etching process, wherein the last etching step of the time multiplexed etching process is of a first time duration. After performing the time multiplexed etching process, an etching step having a second time duration is performed, wherein the second time duration is greater than the first time duration.

## Claims

### Claim 1

A method, comprising:
performing a time multiplexed etching process, wherein a last etching step of the time multiplexed etching process is of a first time duration; and
after performing the time multiplexed etching process, performing an etching step of a second time duration, wherein the second time duration is greater than the first time duration,
wherein the time multiplexed etching process comprises:
performing an etching step comprising etching a surface of a first material;
performing a depositing step comprising depositing a second material over the surface of the first material; and
alternately repeating the etching step and the depositing step.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first material comprises a semiconductor material and the second material comprises a polymer.

### Claim 3 (depends on 1)

The method of claim 1, further comprising:
exposing a third material arranged under the first material, wherein during at least one of the time multiplexed etching process and the etching step performed after the time multiplexed etching process an etch rate of the third material is smaller than an etch rate of the first material.

### Claim 4 (depends on 3)

The method of claim 3, further comprising:
removing the third material by at least one of an etching step and an ashing step.

### Claim 5

A method, comprising:
performing a time multiplexed etching process, wherein a last etching step of the time multiplexed etching process is of a first time duration; and
after performing the time multiplexed etching process, performing an etching step of a second time duration, wherein the second time duration is greater than the first time duration,
wherein at least one of the time multiplexed etching process and the etching step performed after the time multiplexed etching process comprises a dry etching step.

### Claim 6

A method, comprising:
performing a time multiplexed etching process, wherein a last etching step of the time multiplexed etching process is of a first time duration; and
after performing the time multiplexed etching process, performing an etching step of a second time duration, wherein the second time duration is greater than the first time duration,
wherein the time multiplexed etching process comprises multiple etching steps, wherein each of the multiple etching steps of the time multiplexed etching process is of a respective time duration, wherein the second time duration is greater than each of the respective time durations.