# US 9,006,096 B1 · Processes and structures for IC fabrication

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- Number: US 9,006,096 B1
- Document ID: US9006096B1
- Status: Granted
- Kind: B1
- Application number: 13/426,579
- Filed: 2012-03-21
- Granted: 2015-04-14
- Earliest claimed: 2009-06-14
- Applicants: Jayna Sheets
- Inventors: Jayna Sheets
- Web page: https://patentgrep.com/patent/US9006096B1

## CPC

- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10D 62/117: {Shapes of semiconductor bodies}
- H10W 72/50: Bond wires
- H10W 90/00: Package configurations
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 72/01551: {Changing the shapes of bond wires}
- H10W 72/07131: {Means for applying material, e.g. for deposition or forming coatings}
- H10W 72/07141: {Means for applying energy, e.g. ovens or lasers}
- H10W 72/075: {of bond wires}
- H10W 72/07504: {the auxiliary member being temporary, e.g. a sacrificial coating}
- H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding}
- H10W 72/07535: {Applying EM radiation, e.g. induction heating or using a laser}
- H10W 72/534: {being rectangular}
- H10W 72/5363: {the connected ends being wedge-shaped}
- H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements}
- H10W 72/552: {comprising metals or metalloids, e.g. silver}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/60: Strap connectors, e.g. thick copper clips for grounding of power devices
- H10W 72/932: {Plan-view shape, i.e. in top view}
- H10W 72/951: {Materials of bond pads}
- H10W 90/20: Configurations of stacked chips
- H10W 90/722: {between stacked chips}
- H10W 90/752: {between stacked chips}
- H10W 90/753: {between laterally-adjacent chips}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present invention discloses methods and apparatuses for the separations of IC fabrication and assembling of separated IC components to form complete IC structures. In an embodiment, the present fabrication separation of an IC structure into multiple discrete components can take advantages of dedicated IC fabrication facilities and achieve more cost effective products. In another embodiment, the present chip assembling provides high density interconnect wires between bond pads, enabling cost-effective assembling of small chip components. In an aspect, the present process coats the component surfaces to facilitate the bonding of the bond pads. In another aspect, the present process coats the bond pads with shelled capsules to facilitate the bonding of the bond pads.

## Claims

### Claim 1

A method for interconnecting bond pads between integrated components, the method comprising:
treating the surface of at least one integrated component, except the surface of the bond pads, so that a liquid metal will not wet or stick to it;
coating a bond pad surface with the liquid metal;
contacting the surfaces of the two integrated components so that the bond pads of the two integrated components are aligned, and wherein the liquid metal makes electrical contact between the two surfaces of the bond pads.

### Claim 2 (depends on 1)

A method as in claim 1 wherein the surfaces of both integrated components are treated.

### Claim 3 (depends on 1)

A method as in claim 1 wherein the bond pad surface of the treated integrated component is coated with the liquid metal.

### Claim 4 (depends on 1)

A method as in claim 1 further comprising curing the contact.

### Claim 5 (depends on 1)

A method as in claim 1 wherein the liquid metal is mixed with fine particles which alloy to form a higher melting point metal.