# US 9,006,024 B2 · Method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,006,024 B2 - Document ID: US9006024B2 - Status: Granted - Kind: B2 - Application number: 13/865,344 - Filed: 2013-04-18 - Published: 2013-10-31 - Granted: 2015-04-14 - Earliest claimed: 2012-04-25 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Kengo Akimoto - Web page: https://patentgrep.com/patent/US9006024B2 ## CPC - H10D 30/0316: {of lateral bottom-gate TFTs comprising only a single gate} - H10B 41/70: the floating gate being an electrode shared by two or more components - H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 84/907: {CMOS gate arrays} - H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs} - H10D 86/60: wherein the TFTs are in active matrices - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES ## Abstract In a semiconductor device in which transistors are formed in a plurality of layers to form a stack structure, a method for manufacturing the semiconductor device formed by controlling the threshold voltage of the transistors formed in the layers selectively is provided. Further, a method for manufacturing the semiconductor device by which oxygen supplying treatment is effectively performed is provided. First oxygen supplying treatment is performed on a first oxide semiconductor film including a first channel formation region of a transistor in the lower layer. Then, an interlayer insulating film including an opening which is formed so that the first channel formation region is exposed is formed over the first oxide semiconductor film and second oxygen supplying treatment is performed on a second oxide semiconductor film including a second channel formation region over the interlayer insulating film and the exposed first channel formation region. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising: forming a first oxide semiconductor film including a first channel formation region; performing first oxygen supplying treatment on the first oxide semiconductor film; forming an insulating film over the first oxide semiconductor film; forming a second oxide semiconductor film including a second channel formation region over the insulating film; forming an opening in part of the insulating film so that the first channel formation region is exposed; and performing second oxygen supplying treatment on the second oxide semiconductor film and the first channel formation region of the first oxide semiconductor film. ### Claim 2 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the second channel formation region is formed so as not to overlap with the first channel formation region. ### Claim 3 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the first oxygen supplying treatment is oxygen doping treatment or a combination of oxygen doping treatment and oxygen annealing treatment. ### Claim 4 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the second oxygen supplying treatment is oxygen doping treatment or a combination of oxygen doping treatment and oxygen annealing treatment. ### Claim 5 (depends on 3) The method for manufacturing a semiconductor device according to claim 3, wherein the oxygen doping treatment is performed by an ion implantation method. ### Claim 6 (depends on 4) The method for manufacturing a semiconductor device according to claim 4, wherein the oxygen doping treatment is performed by an ion implantation method. ### Claim 7 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, further comprising a step of performing planarization treatment on a surface of the insulating film. ### Claim 8 A method for manufacturing a semiconductor device, comprising: forming a first oxide semiconductor film including a first channel formation region; performing first oxygen supplying treatment on the first oxide semiconductor film; forming an insulating film over the first oxide semiconductor film; forming a second oxide semiconductor film including a second channel formation region over the insulating film; forming an opening in part of the insulating film so that the first channel formation region is exposed; performing second oxygen supplying treatment on the second oxide semiconductor film and the first channel formation region of the first oxide semiconductor film; forming a gate insulating film over the second oxide semiconductor film; and forming a gate electrode over the gate insulating film. ### Claim 9 (depends on 8) The method for manufacturing a semiconductor device according to claim 8, wherein the second channel formation region is formed so as not to overlap with the first channel formation region. ### Claim 10 (depends on 8) The method for manufacturing a semiconductor device according to claim 8, wherein the first oxygen supplying treatment is oxygen doping treatment or a combination of oxygen doping treatment and oxygen annealing treatment. ### Claim 11 (depends on 8) The method for manufacturing a semiconductor device according to claim 8, wherein the second oxygen supplying treatment is oxygen doping treatment or a combination of oxygen doping treatment and oxygen annealing treatment. ### Claim 12 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, wherein the oxygen doping treatment is performed by an ion implantation method. ### Claim 13 (depends on 11) The method for manufacturing a semiconductor device according to claim 11, wherein the oxygen doping treatment is performed by an ion implantation method. ### Claim 14 (depends on 8) The method for manufacturing a semiconductor device according to claim 8, further comprising a step of performing planarization treatment on a surface of the insulating film. ### Claim 15 A method for manufacturing a semiconductor device, comprising: forming a first oxide semiconductor film including a first channel formation region; performing first oxygen supplying treatment on the first oxide semiconductor film; forming an insulating film over the first oxide semiconductor film; forming a gate electrode over the insulating film; forming a gate insulating film over the gate electrode; forming a second oxide semiconductor film including a second channel formation region over the gate insulating film; forming an opening in part of the insulating film and the gate insulating film so that the first channel formation region is exposed; and performing second oxygen supplying treatment on the second oxide semiconductor film and the first channel formation region of the first oxide semiconductor film. ### Claim 16 (depends on 15) The method for manufacturing a semiconductor device according to claim 15, wherein the second channel formation region is formed so as not to overlap with the first channel formation region. ### Claim 17 (depends on 15) The method for manufacturing a semiconductor device according to claim 15, wherein the first oxygen supplying treatment is oxygen doping treatment or a combination of oxygen doping treatment and oxygen annealing treatment. ### Claim 18 (depends on 15) The method for manufacturing a semiconductor device according to claim 15, wherein the second oxygen supplying treatment is oxygen doping treatment or a combination of oxygen doping treatment and oxygen annealing treatment. ### Claim 19 (depends on 17) The method for manufacturing a semiconductor device according to claim 17, wherein the oxygen doping treatment is performed by an ion implantation method. ### Claim 20 (depends on 18) The method for manufacturing a semiconductor device according to claim 18, wherein the oxygen doping treatment is performed by an ion implantation method. ### Claim 21 (depends on 15) The method for manufacturing a semiconductor device according to claim 15, further comprising a step of performing planarization treatment on a surface of the insulating film.