Loading patent…
AssigneeKLA-Tencor Technologies Corporation
InventorsWilliam Volk, James Wiley, Sterling Watson, Sagar A. Kekare, Carl Hess, Paul Frank Marella, Sharon McCauley, Ellis Chang
Estimating the term…
Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.
A computer-implemented method, comprising identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, wherein said identifying is performed using a computer processor, and wherein the reticle is used to form a pattern on the wafer prior to inspection of the wafer.
A computer-implemented method, comprising identifying locations on a wafer in which nuisance defects will be formed based on inspection data produced by inspection of a reticle, wherein said identiing is performed using a computer processor.
A computer-implemented method, comprising:
A computer-implemented method, comprising determining one or more parameters for wafer defect review based on criticality associated with different areas of the water, wherein said determining is performed using a computer processor.
A computer-implemented method, comprising determining one or more parameters for wafer defect analysis based on criticality associated with different areas of the wafer, wherein said determining is performed using a computer processor.
Dependencies are inferred from the claim text.