US 9,002,146 B2 · Optical gate switch

Abstract

An object of the present invention is to realize an optical gate switch of a monolithic integration type which can avoid problems of losses caused by light coupling of a phase modulation unit to a interferometer optical circuit unit, and can be minimized by integration. The optical gate switch according to the present invention includes an optical waveguide wafer in which a quantum well having a phase modulation effect which is generated by an intersubband transition is set as a core layer; a Michelson interferometer formed on the optical waveguide wafer; and a variable light intensity attenuation unit adjusting a light balance of an interferometer in one of reflection side arms of the Michelson interferometer reflection.

Claims8

Dependent claims

An optical gate switch comprising:

an optical waveguide wafer in which a quantum well having a phase modulation effect which is generated by an intersubband transition is set as a core layer;
a Michelson interferometer formed over the optical waveguide wafer;
a partial reflection film and an anti-reflective film installed on respective ports of the Michelson interferometer;
a phase modulation unit located in a partial area of an end surface side of the phase modulation side arm of the Michelson interferometer;
and
a variable light intensity attenuation unit adjusting a light balance of an interferometer in one of reflection side arms of the Michelson interferometer.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/985,699Filed 15 Feb 2012

Priority

JP 2011-03339718 Feb 2011

Published

US 2013/0343694 A126 Dec 2013

Granted

7 Apr 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

G02F 1/01708
Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells: in an optical wavequide structure
B82Y 20/00
Nanooptics
G02F 1/2257
In an optical waveguide structure: the optical waveguides being made of semiconducting material
G02F 1/01733
Non-rectangular quantum well structures, e.g. graded or stepped quantum wells: coupled or double quantum wells

Optical gate switch

Life of this patent

Optical gate switch

Life of this patent

Abstract

Claims8