Device and method for improving reading speed of memory

A method for sensing data in a memory device, the memory device comprising an array of memory cells, a plurality of sense amplifiers coupled with the array, a plurality of output data lines between outputs of corresponding sense amplifiers in the plurality of sense amplifiers and inputs of data output multiplexers, and a plurality of precharge circuits configured to apply a precharge voltage on the output data lines, the method comprising:

• controlling the sense amplifiers in the plurality of sense amplifiers and the precharge circuits, including to cause the precharge circuits to precharge the output data lines before the sense amplifiers drive output data signals to the output data lines,
• wherein the controlling comprises:
• enabling the sense amplifiers in the plurality of sense amplifiers to sense data at data inputs of the sense amplifiers during a sensing interval starting at a first time and ending at a second time subsequent to the first time;
• outputting sensed data to the output data lines starting at the second time;
• and
• enabling the precharge circuits to precharge the output data lines during a precharge interval starting at or after the first time and ending prior to the second time.