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US 9,001,590 B2Granted
Method for operating a semiconductor structure
AssigneeMacronix International Co., Ltd.
InventorHang-Ting Lue
Life of this patent
Estimating the term…
Abstract
A method for operating a semiconductor structure is provided. The semiconductor structure includes a first conductor extending in a first direction, a second conductor extending in a second direction different from the first direction, and a dielectric layer between the first conductor and the second conductor. The method for operating the semiconductor structure comprises following steps. A current is provided to flow in the first direction in the first conductor.
Claims10
A method for operating a semiconductor structure, wherein the semiconductor structure is a 3D stack memory and comprises:
- a stack of first conductors extending in a first direction and separated from each other;
- a second conductor extending in a second direction different from the first direction and along the first conductors of the same stack;
- and
- a dielectric layer between the first conductors of the same stack and the second conductor,
- the method for operating the semiconductor structure comprises providing a first current flowing in the first direction in the first conductors or in the second direction in the second conductor to heat the first conductors or the second conductor, and providing a second current flowing in the first conductors or in the second conductor for read, program and erase operations, wherein the first current is higher than the second current.
2 more elements
Dependencies are inferred from the claim text.