Data writing method, memory control circuit unit and memory storage apparatus

A memory control circuit unit, for controlling a rewritable non-volatile memory module, the memory control circuit unit comprising:

• a host interface, configured to be coupled to a host system;
• a memory interface, configured to be coupled to the rewritable non-volatile memory module, wherein the rewritable non-volatile memory module has a plurality of physical erasing units, and each of the physical erasing units has a plurality of physical programming units;
• and
• a memory management circuit, coupled to the host interface and the memory interface and configured to at least partition the physical erasing units into a free area and a temporary area, wherein data is written into the physical erasing units of the temporary area by using a single-page mode,
• wherein the memory management circuit is further configured to receive first data from the host system, and the host system instructs to store the first data to a plurality of logical sub-units of a first logical unit,
• wherein the memory management circuit is further configured to select physical erasing units from the plurality of physical erasing units of the temporary area, the free area or both the temporary area and the free area as a plurality of temporary physical erasing units of a first temporary physical erasing unit group corresponding to the first logical unit according to an average erasing count of the physical erasing units of the temporary area,
• wherein the memory management circuit is further configured to write the first data into the temporary physical erasing units of the first temporary physical erasing unit group in the single-page mode,
• wherein the memory management circuit is further configured to select a first physical erasing unit from the physical erasing units of the free area, copy the first data from the temporary physical erasing units of the first temporary physical erasing unit group to the first physical erasing unit and map the first logical unit to the first physical erasing unit.

A memory storage apparatus, comprising:

• a connection interface unit, configured to be coupled to a host system;
• a rewritable non-volatile memory module, having a plurality of physical erasing units, and each of the physical erasing units having a plurality of physical programming units;
• and
• a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module and configured to at least partition the physical erasing units into a free area and a temporary area, wherein data is written into the physical erasing units of the temporary area by using a single-page mode,
• wherein the memory control circuit unit is further configured to receive first data from the host system, and the host system instructs to store the first data to a plurality of logical sub-units of a first logical unit,
• wherein the memory control circuit unit is further configured to select physical erasing units from the plurality of physical erasing units of the temporary area, the free area or both the temporary area and the free area as a plurality of temporary physical erasing units of a first temporary physical erasing unit group corresponding to the first logical unit according to an average erasing count of the physical erasing units of the temporary area,
• wherein the memory control circuit unit is further configured to write the first data into the temporary physical erasing units of the first temporary physical erasing unit group in the single-page mode,
• wherein the memory control circuit unit is further configured to select a first physical erasing unit from the physical erasing units of the free area, copy the first data from the temporary physical erasing units of the first temporary physical erasing unit group to the first physical erasing unit and map the first logical unit to the first physical erasing unit.