Semiconductor memory device for and method of applying temperature-compensated word line voltage during read operation
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-Sun Song, Eung-Suk Lee, Il-Han Park
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Abstract
A semiconductor memory device configured to apply a temperature-compensated word line voltage to a word line during a data read operation includes a memory cell array including a plurality of word lines, a plurality of non-volatile memory cells connected to the word lines, and a word line voltage application unit configured to apply a temperature-compensated read voltage to a selected word line and to apply a temperature-compensated pass voltage to at least one unselected word line during a read operation.
Claims18
A semiconductor memory device, comprising:
- a memory cell array including a plurality of word lines and a plurality of non-volatile memory cells connected to the word lines;
- and
- a word line voltage application unit configured to apply a temperature-compensated read voltage to a selected word line of the plurality of word lines, and to apply a temperature-compensated pass voltage to at least one unselected word line of the plurality of word lines during a read operation,
- wherein at least one of the plurality of non-volatile memory cells has a plurality of threshold voltage levels, and
- the word line voltage application unit is configured to apply temperature-compensated pass voltages corresponding to respective threshold voltage levels.
A semiconductor memory device, comprising:
- a memory cell array comprising a plurality of word lines and a plurality of non-volatile memory cells connected to the plurality of word lines;
- and
- a word line voltage application unit configured to apply, in a first mode, a temperature-compensated read voltage to a selected word line of the plurality of word lines, and to apply, in a second mode during a read operation, the temperature-compensated read voltage to the selected word line of the plurality of word lines and a temperature-compensated pass voltage to at least one unselected word line of the plurality of word lines,
- wherein the first mode is a state in which an error detection rate of read data is less than a predetermined rate, and
- the second mode is a state in which the error detection rate of the read data is equal to or more than the predetermined rate.
A method of performing a read operation, the method comprising:
- applying, from a circuit during the read operation, a read voltage to a selected word line of a multi-level memory cell, wherein the read voltage is compensated for a temperature of the multi-level memory cell;
- and
- applying, from the circuit during the read operation, a pass voltage to at least one unselected word line of the multi-level memory cell, wherein the pass voltage is compensated for the temperature,
- wherein the applying the pass voltage comprises applying the pass voltage if a rate of error bits in data from the multi-level memory cell exceeds a predetermined rate.
Dependencies are inferred from the claim text.