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US 9,001,565 B2Granted
Semiconductor device with memory device
AssigneePS4 Luxco S.a.r.l.
InventorNoriaki Ikeda
Life of this patent
Estimating the term…
Abstract
A memory mat (101) includes a main body portion (200) that includes a first capacitor (203A), a linear conductive film (204) that is formed between the main body portion (200) and a peripheral circuit (104), and a second capacitor (203B) that is formed to be in contact with the conductive film (204) at a bottom of the second capacitor (203B). The first capacitor (203A) is in contact with a contact layer (202) at a bottom of the first capacitor (203A).
Claims8
A semiconductor device comprising:
- a memory mat and a peripheral circuit that is formed around said memory mat,
- wherein said memory mat includes:
- a main body portion that includes a first capacitor;
- a linear conductive film that is formed between the main body portion and said peripheral circuit, wherein the linear conductive film is linearly extended in a direction parallel to a boundary between the memory mat and the peripheral circuit;
- and
- a second capacitor that is formed to be in contact with the conductive film at a bottom of the second capacitor, and
- the first capacitor is formed to be in contact with a contact layer at a bottom of the first capacitor.
4 more elements
A semiconductor device comprising:
- a memory mat and a peripheral circuit that is formed around said memory mat, wherein said memory mat includes:
- a main body portion that includes a first capacitor;
- a linear conductive film that is formed between the main body portion and said peripheral circuit;
- and
- a second capacitor that is formed to be in contact with the conductive film at a bottom of the second capacitor, and
- the first capacitor is formed to be in contact with a contact layer at a bottom of the first capacitor,
- the main body portion includes a bit line that extends along a first direction in a plane with said memory mat, and
- the conductive film is formed along a second direction orthogonal to the first direction between the main body portion and said peripheral circuit in the first direction;
- and
- a dummy bit line that extends along the first direction between the main body portion and said peripheral circuit in the second direction.
7 more elements
A semiconductor device comprising:
- a memory mat and a peripheral circuit that is formed around said memory mat,
- wherein said memory mat includes:
- a main body portion that includes a first capacitor;
- a linear conductive film that is formed between the main body portion and said peripheral circuit, wherein the linear conductive film is linearly extended in a direction parallel to a boundary between the memory mat and the peripheral circuit;
- and
- a second capacitor,
- wherein the first capacitor is formed to be in contact with a contact layer at a bottom of the first capacitor, and
- wherein the linear conductive film is in contact with a bottom surface of an electrode of the second capacitor.
5 more elements
Dependencies are inferred from the claim text.