Performing forming processes on resistive memory
AssigneeMicron Technology, Inc.
InventorXiaonan Chen
Life of this patent
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Abstract
The present disclosure includes apparatuses and methods for performing forming processes on resistive memory. A number of embodiments include applying a formation signal to the storage element of a resistive memory cell, wherein the formation signal includes a first portion having a first polarity and a first amplitude, a second portion having a second polarity and a second amplitude, wherein the second polarity is opposite the first polarity and the second amplitude is smaller than the first amplitude, and a third portion having the first polarity and a third amplitude that is smaller than the first amplitude.
Claims27
A method of performing a forming process on a storage element of a resistive memory cell, the method comprising:
- rupturing a resistive portion of an initial filament by applying a pulse to the storage element;
- and
- forming a complete filament by applying an additional pulse to the storage element.
A method of performing a forming process on a storage element of a resistive memory cell, the method comprising:
- applying a formation signal to the storage element, wherein:
- a portion of the formation signal causes rupturing of a resistive portion of an initial filament;
- and
- an additional portion of the formation signal causes formation of a complete filament.
An apparatus, comprising:
- an array of resistive memory cells;
- and
- a controller configured to apply a formation signal to a storage element of a number of the resistive memory cells, wherein the formation signal includes:
- a portion configured to rupture a resistive portion of an initial filament;
- and
- an additional portion configured to form a complete filament.
A method of performing a forming process on a storage element of a resistive memory cell, the method comprising:
- applying a pulse to the storage element;
- and
- applying an additional pulse to the storage element;
- wherein the pulse and the additional pulse have opposite polarities and substantially equal amplitudes.
An apparatus, comprising:
- an array of resistive memory cells;
- and
- a controller configured to apply a formation signal to a storage element of a number of the resistive memory cells, wherein the formation signal includes:
- a portion;
- and
- an additional portion;
- wherein the portion and the additional portion have opposite polarities and substantially equal amplitudes.
Dependencies are inferred from the claim text.