Nonvolatile memory devices using variable resistive elements and related driving methods thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Yeon Lee, Yeong-Taek Lee, Bo-Geun Kim
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Abstract
Driving methods of a nonvolatile memory device are provided. The driving method includes providing a start pulse adjusted based on a previous write operation to a resistive memory cell to write data, verifying whether the data has accurately been written using the start pulse, and executing a write operation on the resistive memory cell by an incremental one-way write method or a decremental one-way write method according to the verify result. Related nonvolatile memory devices are also provided.
Claims17
A driving method of a nonvolatile memory device, the driving method comprising:
- providing a start pulse adjusted based on a previous write operation to a resistive memory cell to write data;
- verifying whether the data has accurately been written using the start pulse;
- and
- executing a write operation on the resistive memory cell by an incremental one-way write method or a decremental one-way write method according to the verify result.
A nonvolatile memory device comprising:
- a resistive memory cell;
- a sense amplifier corresponding to the resistive memory cell;
- and
- a write driver corresponding to the resistive memory cell,
- wherein the write driver provides a start pulse determined based on a previous write operation to the resistive memory cell, the sense amplifier performs a verify operation using the start pulse, and the write driver executes a write operation on the resistive memory cell by an incremental one-way write method or a decremental one-way write method according to the verify result.
Dependencies are inferred from the claim text.