Small-grain three-dimensional memory
AssigneesChengDu HaiCun IP Technology LLC, Guobiao Zhang
InventorGuobiao Zhang
Life of this patent
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Abstract
The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor.
Claims20
A small-grain three-dimensional memory, comprising:
- a substrate level comprising a semiconductor substrate, said substrate level further comprising a plurality of functional transistors;
- and
- at least a first memory level stacked above said semiconductor substrate and coupled to said substrate level through a plurality of inter-level vias, said memory level comprising a plurality of memory cells, wherein each of said memory cells comprises a small-grain diode with a critical dimension no larger than 40 nm, a grain size of said small-grain diode being substantially smaller than a small-grain diode size;
- wherein the critical dimension of said first memory level is smaller than the critical dimension of said substrate level.
An amorphous three-dimensional mask-programmed read-only memory with multi-bit-per-cell, comprising:
- a substrate level comprising a semiconductor substrate, said substrate level further comprising a plurality of functional transistors;
- and
- at least a first memory level stacked above said substrate and coupled to said substrate level through a plurality of inter-level vias, said memory level comprising a plurality of mask-programmed read-only memory cells, wherein each of said memory cells stores more than one bit and comprises an amorphous diode with a critical dimension no larger than 40 nm;
- wherein the critical dimension of said first memory level is smaller than the critical dimension of said substrate level.
Dependencies are inferred from the claim text.