Shielded electronic components and method of manufacturing the same

A semiconductor device comprising:

• a wiring substrate having a first main surface, a second main surface opposite the first main surface, and a plurality of side surfaces between the first and second main surfaces in a thickness direction thereof and including a plurality of wiring layers between the first and second main surfaces;
• a first semiconductor chip mounted on the first main surface of the wiring substrate and electrically connected to the wiring substrate;
• and
• a sealing body including a resin and a plurality of SiO2 particles, the sealing body sealing the first main surface of the wiring board and the first semiconductor chip,
• wherein a surface of the sealing body is covered by a plurality of metal plating layers,
• wherein the plurality of metal plating layers has a Pd plating layer formed on the surface of the sealing body and a Ni plating layer formed on and in direct contact with the Pd plating layer,
• wherein a part of the Pd plating layer permeates into holes and spaces defined by interfaces of the resin and the plurality of SiO2 particles of the surface of the sealing body,
• wherein a ground connection through-hole is formed at one of a plurality of side surfaces of the wiring substrate, and the ground connection through-hole is electrically connected to an end portion of a ground wiring layer of the plurality of wiring layers, and
• wherein the plurality of metal plating layers extends to and contacts with the ground connection through-hole and the plurality of metal plating layers are electrically connected to the ground wiring layer.