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US 9,001,020 B2Granted
Shift register circuit, display panel, and electronic apparatus
AssigneeSony Corporation
InventorSeiichiro Jinta
Life of this patent
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Abstract
Disclosed herein is a shift register circuit that is formed on an insulating substrate with thin film transistors having channels of the same conductivity type and includes shift stages, each of the shift stages including: a first thin film transistor; a second thin film transistor; a 3(1)-th thin film transistor; a 3(2)-th thin film transistor; a 4(1)-th thin film transistor; a 4(2)-th thin film transistor; a fifth thin film transistor; and a sixth thin film transistor.
Claims18
A same-conductivity-type channel circuit, comprising:
- a first TFT whose current nodes are electrically connected between a first input node and an output node;
- a second TFT whose current nodes are electrically connected between a first potential line and the output node;
- a third TFT whose current nodes are electrically connected between the first potential line and a control node of the second TFT;
- a fourth TFT whose current nodes are electrically connected to the first potential line and the control node of the first TFT, and the control node of the fourth TFT electrically connected to the control node of the second TFT;
- a fifth TFT whose current node is electrically connected to the control node of the second TFT, the control node of the fifth TFT electrically connected to a second input node;
- a sixth TFT whose current node is electrically connected to the control node of the first TFT, the control node of the sixth TFT electrically connected to a third input node;
- wherein the third TFT and the fifth TFT have a configuration selected from a group consisting of:
- (i) W/L (W denotes channel width and L denotes channel length) of the fifth TFT is equal to or larger than W/L of the third TFT;
- (ii) the control node of the fifth TFT is formed on only one side of a channel layer thereof, and a control node of the third TFT is formed on both sides of a channel layer thereof;
- and
- (iii) source-shield length of the fifth TFT is smaller than source-shield length of the third TFT.
8 more elements
Dependencies are inferred from the claim text.