System and method for process and temperature calibration of capacitor-based oscillators

A device configured to obtain temperature sensor output from a temperature sensor and oscillator output from an oscillator in a same temperature cycle in order to calibrate the temperature sensor and the oscillator in an electronic device, the device comprising:

• a memory;
• an interface configured to communicate with the oscillator and the temperature sensor;
• and
• a controller in communication with the memory and the interface, and configured to:
• send a command in order to configure the oscillator to a predetermined frequency;
• determine a first temperature of the electronic device;
• while the electronic device is at the first temperature in the same temperature cycle:
• receive a first output of the temperature sensor indicative of the temperature sensor sensing the electronic device at the first temperature;
• sense a first output of the oscillator indicative of the oscillator generating a first frequency output at the first temperature;
• control temperature of the electronic device so that the electronic device is at a second temperature in the same temperature cycle, the second temperature distinct from the first temperature;
• while the temperature of the electronic device is being controlled at the second temperature in the same temperature cycle:
• receive a second output of the temperature sensor indicative of the temperature sensor sensing the electronic device at the second temperature;
• sense a second output of the oscillator indicative of the oscillator generating a second frequency output at the second temperature;
• determine a temperature sensor correction factor based on the first output of the temperature sensor, the second output of the temperature sensor, the determined first temperature and the determined second temperature;
• and
• determine an oscillator correction factor based on the first output of the oscillator, the second output of the oscillator, the determined first temperature, the determined second temperature and the predetermined frequency,
• wherein the memory comprises a silicon substrate and a plurality of memory cells forming at least two memory layers vertically disposed with respect to each other to form a monolithic three-dimensional structure, wherein at least one memory layer is vertically disposed with respect to the silicon substrate.