Dummy structures and methods

A method for manufacturing a semiconductor device, the method comprising:

• forming a material layer on a substrate;
• patterning a first semi-global region with a first main pattern;
• patterning a second semi-global region with a second main pattern, wherein the first main pattern is different than the second main pattern;
• and
• introducing a first dummy pattern in the first semi-global region so that a first sidewall area surface density of the first main pattern and the first dummy pattern in the first semi-global region and a second sidewall area surface density of the second main pattern in the second semi-global region are substantially a same density, wherein the first dummy pattern is arranged on active areas and isolation areas.

A method for making sidewall spacers, the method comprising:

• providing a pattern density for a material layer in a first semi-global region and a second semi-global region;
• increasing a first sidewall area surface density in the first semi-global region;
• and
• maintaining a second sidewall area surface density in the second semi-global region, wherein the first sidewall area surface density is within a 5% range of the second sidewall area surface density.

A method for manufacturing a semiconductor device, the method comprising:

• forming a material layer on a substrate;
• patterning a first semi-global region with a first main pattern;
• patterning a second semi-global region with a second main pattern, wherein the first main pattern is different than the second main pattern;
• introducing a first dummy pattern in the first semi-global region so that a first sidewall area surface density of the first main pattern and the first dummy pattern in the first semi-global region and a second sidewall area surface density of the second main pattern in the second semi-global region are substantially a same density;
• and
• introducing a second dummy pattern in the second semi-global region so that the second main pattern and the second dummy pattern form the second sidewall area surface density.

A method for manufacturing a semiconductor device, the method comprising:

• forming a material layer on a substrate;
• patterning a first semi-global region with a first main pattern;
• patterning a second semi-global region with a second main pattern, wherein the first main pattern is different than the second main pattern;
• introducing a first dummy pattern in the first semi-global region so that a first sidewall area surface density of the first main pattern and the first dummy pattern in the first semi-global region and a second sidewall area surface density of the second main pattern in the second semi-global region are substantially a same density, wherein the first dummy pattern comprises groups of 9 bars, each bar having a dimension of 0.18 μm×1.3 μm.