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US 9,000,596 B2Granted
Transistors having a gate comprising a titanium nitride layer
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsPierre Caubet, Sylvain Baudot
Life of this patent
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Abstract
A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion.
Claims7
A MOS transistor comprising:
- a gate insulator comprising a dielectric of high permittivity;
- and
- a conductive gate layer on said gate insulator and successively comprising
- a first auxiliary TiN layer,
- an aluminum layer on said first auxiliary TiN layer,
- a second auxiliary TiN layer on said aluminum layer, and
- a lanthanum layer on said second auxiliary TiN layer,
- a TiN layer on said lanthanum layer,
- with a nitrogen composition in each of said first and second auxiliary TiN layers and said TiN layer being sub-stoichiometric in a lower portion of each respective layer and progressively increasing to a stoichiometric composition in an upper portion of each respective layer.
6 more elements
Dependencies are inferred from the claim text.