Substrate for semiconductor device, semiconductor device having the substrate, and manufacturing method thereof

A substrate for a semiconductor device, comprising:

• a first metal line electrically connected to a first electrode of the semiconductor device;
• a second metal line electrically connected to a second electrode of the semiconductor device and spaced apart from the first metal line;
• a metal support part disposed between the first metal line and the second metal line;
• a first insulating part disposed between the first metal line and the metal support part and configured to electrically insulate the first metal line from the metal support part;
• and
• a second insulating part disposed between the second metal line and the metal support part and configured to electrically insulate the second metal line from the metal support part,
• wherein the metal support part is formed of aluminum, the first and second insulating parts are formed of aluminum oxide that is formed by anodizing the metal support part,
• wherein the metal support part comprises a first surface facing the first metal line, a second surface facing the second metal line, and lateral surfaces connecting the first surface and the second surface,
• wherein the first insulating part has substantially the same area as the first surface to cover an entire area of the first surface and a second insulating part has substantially the same area as the second surface to cover an entire area of the second surface, and
• wherein the first metal ne has substantially the same area as the first surface and the second metal line has substantially the same area as the second surface.