Structure, semiconductor structure and method of manufacturing a semiconductor structure and packaging thereof

A structure comprising:

• a dielectric material formed between a design sensitive structure and a passivation layer;
• and
• a higher wiring layer comprising an upper surface directly contacting the dielectric material and directly contacting a solder bump contact,
• wherein:
• the design sensitive structure comprises a continuous portion of the higher wiring layer that is connected to a lower wiring layer by an underlying via farm;
• the continuous portion of the higher wiring layer is electrically and mechanically connected to the via farm;
• the via farm comprises a grouped plurality of vias providing parallel electrical paths through a layer separating the higher wiring layer from the lower wiring layer;
• each via of the grouped plurality of vias connects between the continuous portion of the higher wiring layer and the lower wiring layer;
• each via of the grouped plurality of vias is in a same wiring layer;
• the via farm is comprised of three or more vias;
• the continuous portion of the higher wiring layer comprising the design sensitive structure is vertically positioned directly above the via farm and the lower wiring level;
• the solder bump contact is an interconnecting metal formed within an opening in the dielectric material;
• the solder bump contact directly contacts a solder bump;
• the solder bump contact is electrically connected to the lower wiring level by the upper wiring level and the via farm;
• the opening in the dielectric material is laterally offset away from the design sensitive structure, the via farm, and the lower wiring level, such that the dielectric material entirely covers the design sensitive structure;
• the passivation layer is formed over the dielectric material and the interconnecting metal;
• an opening in the passivation layer is aligned with the opening in the dielectric material and exposes the solder bump contact;
• the higher wiring layer is electrically connected to the solder bump contact through the opening formed in the dielectric material,
• the solder bump contact has a height in a vertical direction in the opening in the dielectric material and a width in a horizontal direction in the opening in the dielectric material, the height of the being less than the width,
• wherein the dielectric material has a higher strength than a mechanical connection between the higher wiring layer and the underlying via farm, and
• wherein an upper surface of the higher wiring layer directly contacts a lower surface the solder bump contact.