# US 9,000,580 B2 · Power semiconductor module with pressed baseplate and method for producing a power semiconductor module with pressed baseplate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,000,580 B2 - Document ID: US9000580B2 - Status: Granted - Kind: B2 - Application number: 13/749,884 - Filed: 2013-01-25 - Published: 2013-08-01 - Granted: 2015-04-07 - Earliest claimed: 2012-01-27 - Assignees: Infineon Technologies AG - Applicants: Infineon Technologies AG - Inventors: Torsten Groening; Mark Essert; Christian Steininger; Roman Lennart Tschirbs - Web page: https://patentgrep.com/patent/US9000580B2 ## CPC - H10W 40/60: Securing means for detachable heating or cooling arrangements, e.g. clamps - H10W 40/10: Arrangements for heating - H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates} - H10W 70/027: {Mechanical treatments, e.g. deforming, punching or cutting} - H10W 95/00: Packaging processes not covered by the other groups of this subclass - H10W 74/114: {by a substrate and the encapsulations} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A power semiconductor module includes a baseplate having a top side, an underside, and a depression formed in the baseplate. The depression extends into the baseplate proceeding from the top side. A thickness of the baseplate is locally reduced in a region of the depression. The power semiconductor module further includes a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate. ## Claims ### Claim 1 A power semiconductor module, comprising: a baseplate having a top side, an underside, and a depression formed in the baseplate, the depression extending into the baseplate proceeding from the top side, a thickness of the baseplate being locally reduced in a region of the depression; and a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate, the circuit carrier comprising a substrate including a dielectric ceramic lamina provided with an upper metallization on a side facing away from the baseplate and a lower metallization on a side facing the baseplate, the lower metallization being electrically insulated from the upper metallization. ### Claim 2 (depends on 1) The power semiconductor module as claimed in claim 1, wherein the baseplate has a thickness of 2 mm to 10 mm. ### Claim 3 (depends on 2) The power semiconductor module as claimed in claim 2, wherein the depression has a depth between 5% and 95% of the thickness of the baseplate. ### Claim 4 (depends on 1) The power semiconductor module as claimed in claim 1, wherein the circuit carrier is connected by a cohesive connection to the top side of the baseplate using a connecting means arranged between the circuit carrier and the baseplate. ### Claim 5 (depends on 4) The power semiconductor module as claimed in claim 4, wherein the cohesive connection is a soldered connection, a sintered connection, or an adhesive-bonded connection. ### Claim 6 (depends on 4) The power semiconductor module as claimed in claim 4, wherein the connecting means extends into the depression and completely fills the depression at least at one location completely from a deepest point of the depression as far as the top side of the baseplate. ### Claim 7 (depends on 1) The power semiconductor module as claimed in claim 1, wherein a width of the depression measured at half a depth of the depression is greater than the depth. ### Claim 8 (depends on 1) The power semiconductor module as claimed in claim 1, wherein the depression has a width greater than a depth of the depression. ### Claim 9 (depends on 1) The power semiconductor module as claimed in claim 1, wherein a surface of the baseplate within the depression has a radius of curvature less than the thickness of the baseplate. ### Claim 10 (depends on 1) The power semiconductor module as claimed in claim 1, further comprising a heat sink with a thermal contact area pressed against the underside of the baseplate. ### Claim 11 (depends on 1) The power semiconductor module as claimed in claim 1, wherein the circuit carrier completely covers the depression in the baseplate. ### Claim 12 (depends on 1) The power semiconductor module as claimed in claim 1, wherein the circuit carrier only partly covers the depression in the baseplate. ### Claim 13 (depends on 1) The power semiconductor module as claimed in claim 1, wherein the depression in the baseplate comprises a trench closed in a ring-shaped manner. ### Claim 14 (depends on 13) The power semiconductor module as claimed in claim 13, wherein the trench has one of an annular course, an oval course, or an elliptical course. ### Claim 15 (depends on 1) The power semiconductor module as claimed in claim 1, wherein the depression in the baseplate comprises two trenches which cross one another. ### Claim 16 A method for producing a power semiconductor module, the method comprising: providing a plate having a top side and an underside opposite the top side; forming one or more depressions in the plate, each of the depressions extending into the plate proceeding from the top side so that a thickness of the plate is locally reduced in a region of the depressions; bending the plate so that the plate is provided with a curvature; arranging a circuit carrier above the depressions on the top side of the plate; and connecting the circuit carrier to the plate such that the depressions are interposed between the circuit carrier and the underside of the plate. ### Claim 17 (depends on 16) The method as claimed in claim 16, wherein the plate is bent after the depressions are formed in the plate. ### Claim 18 (depends on 16) The method as claimed in claim 16, wherein the plate is bent before the depressions are formed in the plate. ### Claim 19 (depends on 16) The method as claimed in claim 16, further comprising pressing the underside of the baseplate against a thermal contact area of a heat sink. ### Claim 20 A power semiconductor module, comprising: a baseplate having a top side, an underside, and a depression formed in the baseplate, the depression extending into the baseplate proceeding from the top side, a thickness of the baseplate being locally reduced in a region of the depression; and a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate, wherein the circuit carrier only partly covers the depression in the baseplate. ### Claim 21 A power semiconductor module, comprising: a baseplate having a top side, an underside, and a depression formed in the baseplate, the depression extending into the baseplate proceeding from the top side, a thickness of the baseplate being locally reduced in a region of the depression; and a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate, wherein the depression in the baseplate comprises a trench closed in a ring-shaped manner. ### Claim 22 A power semiconductor module, comprising: a baseplate having a top side, an underside, and a depression formed in the baseplate, the depression extending into the baseplate proceeding from the top side, a thickness of the baseplate being locally reduced in a region of the depression; and a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate, wherein the depression in the baseplate comprises two trenches which cross one another.