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US 9,000,575 B2Granted
Semiconductor device having stacked substrates with protruding and recessed electrode connection
AssigneeSeiko Epson Corporation
InventorHideo Imai
Life of this patent
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Abstract
A first substrate with a penetration electrode formed thereon is stacked on a second substrate with a protruding electrode formed thereon. The penetration electrode has a recessed portion. The substrates are stacked with the protruding electrode entered in the recessed portion. A distal width of the protruding electrode is smaller than an opening width of the recessed portion.
Claims14
A semiconductor device comprising:
- a first substrate having a first electrode formed on a first surface, and a penetration electrode formed in a hole reaching the first electrode from a second surface opposite to the first surface;
- and
- a second substrate having a protruding electrode connected to the penetration electrode;
- wherein the penetration electrode has a recessed portion on the side of the second surface, and a bottom part of the recessed portion is situated between the first surface and the second surface of the first substrate,
- the protruding electrode is entered in the recessed portion so that a distal end of the protruding electrode has contact with the bottom part of the recessed portion of the penetration electrode, and the contact is located inside the first substrate,
- an opening width a of the recessed portion and a distal width b of the protruding electrode are in a relation of a>b so that an inner surface of the recessed portion is spaced apart from an outer surface of the protruding electrode,
- the penetration electrode is made of two or more kinds of material, and a surface of the recessed portion is made of a material having the lowest melting point of the two or more kinds of material, and
- the material with the lowest melting point and the protruding electrode are joined by metal-metal junction.
5 more elements
A semiconductor device comprising:
- a first substrate;
- a first electrode that is disposed so as to cover the first substrate;
- a penetration electrode that is disposed in a hole of the first substrate, the hole penetrating the first substrate, the penetration electrode being electrically connected to the first electrode;
- a second substrate;
- and
- a protruding electrode that protrudes from the second substrate, wherein
- the penetration electrode has a first part and a second part, and a melting point of the second part is lower than a melting point of the first part, and
- the protruding electrode is entered in the hole, and the protruding electrode and the second part are joined by metal-metal junction.
5 more elements
Dependencies are inferred from the claim text.