Semiconductor structure

A semiconductor structure having at least one corner includes:

• a carrier having a carrier surface, the carrier surface comprises a protection-layered disposing zone and a protection-layered exposing zone located outside the protection-layered disposing zone;
• a first protective layer disposed at the protection-layered disposing zone and having a first surface, the first surface comprises a first disposing zone, at least one first anti-stress zone and a first exposing zone located outside the first disposing zone and the at least one first anti-stress zone, the at least one first anti-stress zone is located at the at least one corner;
• a second protective layer disposed at the first disposing zone and revealing the at least one first anti-stress zone and the first exposing zone, the second protective layer comprises a second surface, a first lateral surface and a second lateral surface, the second surface comprises a second disposing zone and a second exposing zone located outside the second disposing zone, the first lateral surface comprises a first bottom edge, the second lateral surface comprises a second bottom edge, wherein a first extension line extended from the first bottom edge intersects with a second extension line extended from the second bottom edge to form a first base point;
• and
• a third protective layer disposed at the second disposing zone and having a third lateral surface and a fourth lateral surface, the third lateral surface comprises a third bottom edge, the fourth lateral surface comprises a fourth bottom edge, wherein the third bottom edge is projected on the first surface of the first protective layer to form a first projection line situated on the first surface, an extension line of the first projection line intersects with the second bottom edge of the second lateral surface to form a first intersection point, wherein the fourth bottom edge is projected on the first surface of the first protective layer to form a second projection line situated on the first surface, an extension line of the second projection line intersects with the first bottom edge of the first lateral surface to form a second intersection point, and a zone formed by connecting the first base point, the first intersection point and the second intersection point is the at least one first anti-stress zone.