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US 9,000,568 B2Granted
Semiconductor structure and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsSzu-Hao Lai, Yu-Ren Wang, Po-Chun Chen, Chih-Hsun Lin, Che-Nan Tsai, Chun-Ling Lin, Chiu-Hsien Yeh, Te-Lin Sun
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Abstract
A semiconductor structure includes a substrate, an oxide layer, a metallic oxynitride layer and a metallic oxide layer. The oxide layer is located on the substrate. The metallic oxynitride layer is located on the oxide layer. The metallic oxide layer is located on the metallic oxynitride layer. In addition, the present invention also provides a semiconductor process for forming the semiconductor structure.
Claims12
A semiconductor structure, comprising:
- a substrate;
- an oxide layer located on the substrate;
- a metallic oxynitride layer located on the oxide layer, wherein the metallic oxynitride layer comprises an indium oxynitride layer;
- a metallic oxide layer located on the metallic oxynitride layer, wherein the metallic oxide layer comprises a hafnium oxide layer or a zirconium oxide layer;
- and
- a gate electrode layer directly covering the entire metallic oxide layer.
3 more elements
A semiconductor process, comprising:
- providing a substrate;
- forming an oxide layer on the substrate;
- forming a metallic nitride layer on the oxide layer, wherein the metallic nitride layer comprises a gallium nitride layer or an indium nitride layer;
- forming a metallic oxide layer on the metallic nitride layer;
- forming a gate electrode layer directly covering the entire metallic oxide layer;
- and
- performing a thermal treatment process after the gate electrode layer is formed to oxidize the metallic nitride layer into a metallic oxynitride layer wherein at least a part of the metallic oxide layer still remains.
4 more elements
Dependencies are inferred from the claim text.